We report on an indium–silicon co-doping approach for high-Al-content AlGaN layers. Using this approach, very smooth crack-free n-type AlGaN films as thick as 0.5 μm with Al mole fraction up to 40% were grown over sapphire substrates. The maximum electron concentration in the layers, as determined by Hall measurements, was as high as 8×1017 cm−3 and the Hall mobility was up to 40 cm2/Vs. We used this doping technique to demonstrate solar-blind transparent Schottky barrierphotodetectors with the cut-off wavelength of 278 nm.
Published in Applied Physics Letters, Volume 79, Issue 12, 2001, pages 1903-1905.
©Applied Physics Letters 2001, American Institute of Physics (AIP).
Adivarahan ,V., Simin, G., Tamulaitis, G., Srinivasan, R., Yang, J., Khan, M. A., Shur, M. S., & Gaska, R. (17 September 2001). Indium-Silicon Co-Doping of High-Aluminum-Content AlGaN for Solar Blind Photodetectors. Applied Physics Letters, 79 (12), 1903-1905. http://dx.doi.org/10.1063/1.1402159