In this letter, we report on a material deposition scheme for quaternary AlxInyGa1−x–yN layers using a pulsed atomic layer epitaxy (PALE) technique. The PALE approach allows accurate control of the quaternary layer composition and thickness by simply changing the number of aluminum,indium, and gallium pulses in a unit cell and the number of unit cell repeats. Using PALE, AlInGaN layers with Al mole fractions in excess of 40% and strong room-temperature photoluminescence peaks at 280 nm can easily be grown even at temperatures lower than 800 °C.
Published in Applied Physics Letters, Volume 79, Issue 7, 2001, pages 925-927.
©Applied Physics Letters 2001, American Institute of Physics (AIP).
Zhang, J., Kuokstis, E., Fareed, Q., Wang, H., Yang, J., Simin, G., Khan, M. A., Gaska, R., & Shur, M. (13 August 2001). Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers. Applied Physics Letters, 79 (7), 925-927. http://dx.doi.org/10.1063/1.1392301