Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers

Author(s)

J. Zhang
E. Kuokstis
Q. Fareed
H. Wang
J. Yang
Grigory Simin, University of South Carolina - ColumbiaFollow
M. Asif Khan
R. Gaska
M. Shur

Document Type

Article

Abstract

In this letter, we report on a material deposition scheme for quaternary Al_xIn_yGa_1−x–yN layers using a pulsed atomic layer epitaxy (PALE) technique. The PALE approach allows accurate control of the quaternary layer composition and thickness by simply changing the number of aluminum,indium, and gallium pulses in a unit cell and the number of unit cell repeats. Using PALE, AlInGaN layers with Al mole fractions in excess of 40% and strong room-temperature photoluminescence peaks at 280 nm can easily be grown even at temperatures lower than 800 °C.

Publication Info

Published in Applied Physics Letters, Volume 79, Issue 7, 2001, pages 925-927.

©Applied Physics Letters 2001, American Institute of Physics (AIP).

Zhang, J., Kuokstis, E., Fareed, Q., Wang, H., Yang, J., Simin, G., Khan, M. A., Gaska, R., & Shur, M. (13 August 2001). Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers. Applied Physics Letters, 79 (7), 925-927. http://dx.doi.org/10.1063/1.1392301

Rights

©Applied Physics Letters 2001, American Institute of Physics (AIP).

Zhang, J., Kuokstis, E., Fareed, Q., Wang, H., Yang, J., Simin, G., Khan, M. A., Gaska, R., & Shur, M. (13 August 2001). Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers. Applied Physics Letters, 79 (7), 925-927. http://dx.doi.org/10.1063/1.1392301