Document Type
Article
Abstract
We report on Pd/Ag/Au/Ti/Au alloyed metallic contact to pGaN. An 800 °C anneal for 1 min in flowing nitrogen ambient produces an excellent ohmic contact with a specific contact resistivity close to 1×10−6 Ω cm2 and with good stability under high current operation conditions. This high-temperature anneal forms an alloy between Ag,Au, and pGaN resulting in a highly p-doped region at the interface. Using x-ray photoelectron spectroscopy and x-ray diffractionanalysis, we confirm that the contact formation mechanism is the metal intermixing and alloying with the semiconductor.
Publication Info
Published in Applied Physics Letters, Volume 78, Issue 18, 2001, pages 2781-2783.
©Applied Physics Letters 2001, American Institute of Physics (AIP).
Adivarahan, V., Lunev, A., Khan, M. A., Yang, J., Simin, G., Shur, M. S., & Gaska, R. (30 April 2001). Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact to p GaN for High-Current Devices. Applied Physics Letters, 78 (18), 2781-2783. http://dx.doi.org/10.1063/1.1353813
Rights
©Applied Physics Letters 2001, American Institute of Physics (AIP).
Adivarahan, V., Lunev, A., Khan, M. A., Yang, J., Simin, G., Shur, M. S., & Gaska, R. (30 April 2001). Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact to p GaN for High-Current Devices. Applied Physics Letters, 78 (18), 2781-2783. http://dx.doi.org/10.1063/1.1353813
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Electromagnetics and Photonics Commons, Electronic Devices and Semiconductor Manufacturing Commons