We report on Pd/Ag/Au/Ti/Au alloyed metallic contact to pGaN. An 800 °C anneal for 1 min in flowing nitrogen ambient produces an excellent ohmic contact with a specific contact resistivity close to 1×10−6 Ω cm2 and with good stability under high current operation conditions. This high-temperature anneal forms an alloy between Ag,Au, and pGaN resulting in a highly p-doped region at the interface. Using x-ray photoelectron spectroscopy and x-ray diffractionanalysis, we confirm that the contact formation mechanism is the metal intermixing and alloying with the semiconductor.
Published in Applied Physics Letters, Volume 78, Issue 18, 2001, pages 2781-2783.
©Applied Physics Letters 2001, American Institute of Physics (AIP).
Adivarahan, V., Lunev, A., Khan, M. A., Yang, J., Simin, G., Shur, M. S., & Gaska, R. (30 April 2001). Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact to p GaN for High-Current Devices. Applied Physics Letters, 78 (18), 2781-2783. http://dx.doi.org/10.1063/1.1353813