We report on AlGaN/GaN metal–oxide–semiconductor heterostructurefield-effect transistors (MOS-HFETs) grown over insulating 4H–SiC substrates. We demonstrate that the dc and microwave performance of the MOS-HFETs is superior to that of conventional AlGaN/GaN HFETs, which points to the high quality of SiO2/AlGaNheterointerface. The MOS-HFETs could operate at positive gate biases as high as +10 V that doubles the channel current as compared to conventional AlGaN/GaN HFETs of a similar design. The gate leakage current was more than six orders of magnitude smaller than that for the conventional AlGaN/GaN HFETs. The MOS-HFETs exhibited stable operation at elevated temperatures up to 300 °Cwith excellent pinch-off characteristics. These results clearly establish the potential of using AlGaN/GaN MOS-HFET approach for high power microwave and switching devices.
Published in Applied Physics Letters, Volume 77, Issue 9, 2000, pages 1339-1341.
©Applied Physics Letters 2000, American Institute of Physics (AIP).
Khan, M. A., Hu, X., Tarakji, A., Simin, G., Yang, J., Gaska, R. & Shur, M. S. (28 August 2000). AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors on SiC Substrates. Applied Physics Letters, 77 (9), 1339-1341. http://dx.doi.org/10.1063/1.1290269