We report on the piezoelectricdoping and two-dimensional (2D) electron mobility in AlInGaN/GaN heterostructures grown on 6H–SiC substrates. The contribution of piezoelectricdoping to the sheet electron density was determined using an In-controlled built-in strain-modulation technique. Our results demonstrate that in strained AlGaN/GaN heterostructures, the piezoelectric field generates at least 50% of the 2D electrons. The strain modulation changes the potential distribution at the heterointerface, which, in turn, strongly affects the 2D electron mobility, especially at cryogenic temperatures. The obtained results demonstrate the potential of strain engineering and piezoelectricdoping for GaN-based electronics.
Published in Applied Physics Letters, Volume 75, Issue 18, 1999, pages 2806-2808.
©Applied Physics Letters 1999, American Institute of Physics (AIP).
Khan, M. A., Yang, J. W., Simin, G., Gaska, R., Shur, M. S., & Bykhovski, A. D. (1 November 1999). Piezoelectric Doping in AlInGaN/GaN Heterostructures. Applied Physics Letters, 75 (18), 2806-2808. http://dx.doi.org/10.1063/1.125156