DC and Microwave Performance of a GaN/AlGaN MOSHFET under High Temperature Stress

Author(s)

A. Tarakji
X. Hu
A. Koudymov
Grigory Simin, University of South Carolina - ColumbiaFollow
J. Yang
M. A. Khan
M. S. Shur
R. Gaska

Document Type

Article

Publication Info

Published in Solid-State Electronics, Volume 46, Issue 8, 2002, pages 1211-1214.

©Solid-State Electronics 2002, Elsevier.

Tarakji, A., Hu, X., Koudymov, A., Simin, G., Yang, J., Khan, M. A., Shur, M. S., & Gaska, R. (August 2002). DC and Microwave Performance of a GaN/AlGaN MOSHFET under High Temperature Stress. Solid-State Electronics, 46 (8), 1211-1214. http://dx.doi.org/10.1016/S0038-1101(02)00015-1

Rights

©Solid-State Electronics 2002, Elsevier.

Tarakji, A., Hu, X., Koudymov, A., Simin, G., Yang, J., Khan, M. A., Shur, M. S., & Gaska, R. (August 2002). DC and Microwave Performance of a GaN/AlGaN MOSHFET under High Temperature Stress. Solid-State Electronics, 46 (8), 1211-1214. http://dx.doi.org/10.1016/S0038-1101(02)00015-1