Document Type
Article
Abstract
Ultra-wide bandgap AlGaN has attracted recent attention as a promising channel material for next-generation high electron mobility transistors (HEMTs) for RF power due to its high critical field, excellent transport properties, and potential for operation in extreme environments. However, the effects of temperature on the transport properties are not fully understood. Here, Al0.62Ga0.38N/Al0.45Ga0.55N HEMTs have been fabricated and characterized up to 150 °C at DC and RF to evaluate the effect of temperature on electron mobility and carrier velocity. Measured results indicate that both mobility and carrier velocity exhibit modest dependence on temperature, suggesting that AlGaN channel HEMTs are promising for future RF power applications.
Digital Object Identifier (DOI)
Publication Info
Published in Applied Physics Letters, Volume 120, Issue 10, 2022.
Rights
© 2022 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
APA Citation
Ye, H., Mikhail Gaevski, Grigory Simin, Khan, A., & Fay, P. (2022). Electron mobility and velocity in Al0.45Ga0.55N-channel ultra-wide bandgap HEMTs at high temperatures for RF power applications. Applied Physics Letters, 120(10).https://doi.org/10.1063/5.0084022