The single crystal growth of large semi‐insulating GaSe by the vertical Bridgman technique using zone‐refined selenium (Se) and HP gallium (Ga) is described. The grown crystals (up to 10 cm long and 2.5 cm diameter) have been characterized thoroughly by X‐ray diffraction (XRD), energy dispersive analysis by x‐rays (EDAX), optical absorption/transmission, X‐ray photoelectron spectroscopy (XPS), charge carrier electrical property measurements, second harmonic test, and radiation detection measurements.
Published in AIP Conference Proceedings, Volume 772, 2005, pages 159-160.
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Mandal, K. C., Noblitt, C., Choi, M., Smirnov, A., & Rauh, R. D. (2005). Crystal growth, characterization and anisotropic electrical properties of GaSe single crystals for THz source and radiation detector applications. AIP Conference Proceedings, 772, 159-160. http://dx.doi.org/10.1063/1.1994042
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