Radiation Detectors Based on 4H Semi-Insulating Silicon Carbide

Author(s)

K. C. Mandal, University of South Carolina - ColumbiaFollow
Ramesh Madhu Krishna, University of South CarolinaFollow
P. G. Muzykov, University of South Carolina - ColumbiaFollow
Zegilor Laney, University of South Carolina - ColumbiaFollow
Sandip Das, University of South Carolina - ColumbiaFollow
Tangali S. Sudarshan, University of South Carolina - ColumbiaFollow

Document Type

Article

Subject Area(s)

Engineering, Optics, Spectroscopy

Publication Info

Published in Proceedings of SPIE, Volume 7805, 2010, pages 78050U-1-78050U-8.

© Proceedings of SPIE 2010, Society of Photo-optical Instrumentation Engineers

Mandal, K. C., Krishna, R., Muzykov, P. G., Laney, Z., Das, S., & Sudarshan, T. S. (1 August 2010). Radiation detectors based on 4H semi-insulating silicon carbide. Proceedings of SPIE, 7805, 78050U-1-8.

http://dx.doi.org/10.1117/12.863572

Rights

© Proceedings of SPIE 2010, Society of Photo-optical Instrumentation Engineers

Mandal, K. C., Krishna, R., Muzykov, P. G., Laney, Z., Das, S., & Sudarshan, T. S. (1 August 2010). Radiation detectors based on 4H semi-insulating silicon carbide. Proceedings of SPIE, 7805, 78050U-1-8.

http://dx.doi.org/10.1117/12.863572