Characterization of 4H Semi-Insulating Silicon Carbide Single Crystals Using Electron Beam Induced Current

Author(s)

P. G. Muzykov, University of South Carolina - ColumbiaFollow
Ramesh Madhu Krishna, University of South CarolinaFollow
Sandip Das, University of South Carolina - ColumbiaFollow
Timothy C. Hayes, University of South CarolinaFollow
Tangali S. Sudarshan, University of South Carolina - ColumbiaFollow
K. C. Mandal, University of South Carolina - ColumbiaFollow

Document Type

Article

Subject Area(s)

Materials Science, Physics, Engineering

Publication Info

Published in Materials Letters, Volume 65, Issue 5, 2011, pages 911-914.

© Materials Letters 2011, Elsevier

Muzykov, P. G., Krishna, R., Das, S., Hayes, T., Sudarshan, T. S., & Mandal, K. C. (15 March 2011). Characterization of 4H semi-insulating silicon carbide single crystals using electron beam induced current. Materials Letters, 65(5), 911-914.

http://dx.doi.org/10.1016/j.matlet.2010.11.074

Rights

© Materials Letters 2011, Elsevier

Muzykov, P. G., Krishna, R., Das, S., Hayes, T., Sudarshan, T. S., & Mandal, K. C. (15 March 2011). Characterization of 4H semi-insulating silicon carbide single crystals using electron beam induced current. Materials Letters, 65(5), 911-914.

http://dx.doi.org/10.1016/j.matlet.2010.11.074