In situ Infrared Evidence for the Electrochemical Incorporation of Hydrogen into Si and Ge

Author(s)

K. C. Mandal, University of South Carolina - ColumbiaFollow
F. Ozanam
J.-N. Chazalviel

Document Type

Article

Subject Area(s)

Engineering, Electrical Engineering, Electrochemistry

Publication Info

Published in Applied Physics Letters, Volume 57, Issue 26, 1990, pages 2788-2790.

© Applied Physics Letters 1990, American Institute of Physics

Mandal, K. C., Ozanam, F., & Chazalviel, J.-N. (24 December 1990). In situ infrared evidence for the electrochemical incorporation of hydrogen into Si and Ge. Applied Physics Letters, 57(26), 2788-2790.

http://dx.doi.org/10.1063/1.103788

http://scitation.aip.org/content/aip/journal/apl/57/26/10.1063/1.103788

Rights

© Applied Physics Letters 1990, American Institute of Physics

Mandal, K. C., Ozanam, F., & Chazalviel, J.-N. (24 December 1990). In situ infrared evidence for the electrochemical incorporation of hydrogen into Si and Ge. Applied Physics Letters, 57(26), 2788-2790.

http://dx.doi.org/10.1063/1.103788

http://scitation.aip.org/content/aip/journal/apl/57/26/10.1063/1.103788