Engineering, Electrical Engineering
Published in Journal of Applied Physics, Volume 111, Issue 1, 2012, pages 014910-1-014910-7.
© Journal of Applied Physics 2012, American Institute of Physics
Muzykov, P. G., Krishna, R. M., & Mandal, K. C. (1 January 2012). Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy. Journal of Applied Physics, 111(1), #014910.