X-Ray Photoemission Analysis of Chemically Treated GaTe Semiconductor Surfaces for Radiation Detector Applications

Author(s)

A. J. Nelson
A. M. Conway
B. W. Sturm
E. M. Behymer
C. E. Reinhardt
R. J. Nikolic
S. A. Payne
G. Pabst
K. C. Mandal, University of South Carolina - ColumbiaFollow

Document Type

Article

Subject Area(s)

Engineering, Electrical Engineering

Publication Info

Published in Journal of Applied Physics, Volume 106, Issue 2, 2009, pages 023717-1-023717-5.

© Journal of Applied Physics 2009, American Institute of Physics

Nelson, A. J., Conway, A. M., Sturm, B. W., Behymer, E. M., Reinhardt, C. E., Nikolic, R. J., Payne, S. A., Pabst, G., & Mandal, K. C. (15 July 2009). X-ray photoemission analysis of chemically treated GaTe semiconductor surfaces for radiation detector applications. Journal of Applied Physics, 106(2), #023717.

http://dx.doi.org/10.1063/1.3176478

http://scitation.aip.org/content/aip/journal/jap/106/2/10.1063/1.3176478

Rights

© Journal of Applied Physics 2009, American Institute of Physics

Nelson, A. J., Conway, A. M., Sturm, B. W., Behymer, E. M., Reinhardt, C. E., Nikolic, R. J., Payne, S. A., Pabst, G., & Mandal, K. C. (15 July 2009). X-ray photoemission analysis of chemically treated GaTe semiconductor surfaces for radiation detector applications. Journal of Applied Physics, 106(2), #023717.

http://dx.doi.org/10.1063/1.3176478

http://scitation.aip.org/content/aip/journal/jap/106/2/10.1063/1.3176478