Electrical Engineering, Applied Physics
Published in Journal of Applied Physics, Volume 115, Issue 22, 2014, pages 224504-1-224504-6.
© Journal of Applied Physics 2014, American Institute of Physics
Mannan, M. A., Chaudhuri, S. K., Nguyen, K. V., & Mandal, K. C. (14 June 2014). Effect of Z⅟₂, EH₅, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies. Journal of Applied Physics, 115(22), #224504.