High-Temperature Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors

Author(s)

Grigory Simin, University of South Carolina - ColumbiaFollow
A. Tarakji
X. Hu
A. Koudymov
J. Yang
M. Asif Khan
M. S. Shur
R. Gaska

Document Type

Article

Publication Info

Published in Physica Status Solidi (a), Volume 188, Issue 1, 2001, pages 219-222.

©Physica Status Solidi (a) 2001, Wiley VCH-Verlag.

Simin, G., Tarakji, A., Hu, X., Koudymov, A., Yang, J., Khan, M. A., Shur, M. S., & Gaska, R. (November 2001). High-Temperature Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors. Physica Status Solidi (a), 188 (1), 219-222. http://dx.doi.org/10.1002/1521-396X(200111)188:1<219::AID-PSSA219>3.0.CO;2-L

Rights

©Physica Status Solidi (a) 2001, Wiley VCH-Verlag.

Simin, G., Tarakji, A., Hu, X., Koudymov, A., Yang, J., Khan, M. A., Shur, M. S., & Gaska, R. (November 2001). High-Temperature Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors. Physica Status Solidi (a), 188 (1), 219-222. http://dx.doi.org/10.1002/1521-396X(200111)188:1<219::AID-PSSA219>3.0.CO;2-L