High-Power RF Switching using III-Nitride Metal-Oxide-Semiconductor Heterojunction Capacitors

Author(s)

Grigory Simin, University of South Carolina - ColumbiaFollow
A. Koudymov
Z.-J. Yang
V. AdivarahanFollow
J. Yang
M. Asif Khan

Document Type

Article

Publication Info

Published in IEEE Electron Device Letters, Volume 26, Issue 2, 2005, pages 56-58.

©IEEE Electron Device Letters 2005, Institute of Electrical and Electronics Engineers.

Simin, G., Koudymov, A., Yang, Z-J., Adivarahan, V., Yang, J., & Khan, M. A. (February 2005). High-Power RF Switching using III-Nitride Metal-Oxide-Semiconductor Heterojunction Capacitors. IEEE Electron Device Letters, 26 (2), 56-58. http://dx.doi.org/10.1109/LED.2004.841470

Rights

©IEEE Electron Device Letters 2005, Institute of Electrical and Electronics Engineers.

Simin, G., Koudymov, A., Yang, Z-J., Adivarahan, V., Yang, J., & Khan, M. A. (February 2005). High-Power RF Switching using III-Nitride Metal-Oxide-Semiconductor Heterojunction Capacitors. IEEE Electron Device Letters, 26 (2), 56-58. http://dx.doi.org/10.1109/LED.2004.841470