Millimeter-Wave High-Power 0.25-µm Gate-Length AlGaN/GaN HEMTs on SiC Substrates

Author(s)

R. S. Schwindt
V. Kumar
A. Kuliev
Grigory Simin, University of South Carolina - ColumbiaFollow
J. W. Yang
M. A. Khan
M. E. Muir
I. Adesida

Document Type

Article

Publication Info

Published in IEEE Microwave and Wireless Components Letters, Volume 13, Issue 31, 2003, pages 93-95.

©IEEE Microwave and Wireless Components Letters 2003, Institute of Electrical and Electronics Engineers.

Schwindt, R. S., Kumar, V., Kuliev, A., Simin, G., Yang, J. W., Khan, M. A., Muir, M. E., & Adesida, I. (March 2003). Millimeter-Wave High-Power 0.25-µm Gate-Length AlGaN/GaN HEMTs on SiC Substrates. IEEE Microwave and Wireless Components Letters, 13 (3), 93-95. http://dx.doi.org/10.1109/LMWC.2003.810115

Rights

©IEEE Microwave and Wireless Components Letters 2003, Institute of Electrical and Electronics Engineers.

Schwindt, R. S., Kumar, V., Kuliev, A., Simin, G., Yang, J. W., Khan, M. A., Muir, M. E., & Adesida, I. (March 2003). Millimeter-Wave High-Power 0.25-µm Gate-Length AlGaN/GaN HEMTs on SiC Substrates. IEEE Microwave and Wireless Components Letters, 13 (3), 93-95. http://dx.doi.org/10.1109/LMWC.2003.810115