GaN/AlGaN P-Channel Inverted Heterostructure JFET

Author(s)

Maxim Shatalov
Grigory Simin, University of South Carolina - ColumbiaFollow
Jianping Zhang
Vinod AdivarahanFollow
A. Koudymov
R. Pachipulusu
M. Asif Khan

Document Type

Article

Publication Info

Published in IEEE Electron Device Letters, Volume 23, Issue 8, 2002, pages 452-454.

©IEEE Electron Device Letters 2002, Institution of Electrical and Electronics Engineers (IEEE).

Shatalov, M., Simin, G., Zhang, J., Adivarahan, V., Koudymov, A., Pachipulusu, R., & Khan, M. A. (August 2002). GaN/AlGaN P-Channel Inverted Heterostructure JFET. IEEE Electron Device Letters, 23 (8), 452-454. http://dx.doi.org/10.1109/LED.2002.801295

Rights

©IEEE Electron Device Letters 2002, Institution of Electrical and Electronics Engineers (IEEE).

Shatalov, M., Simin, G., Zhang, J., Adivarahan, V., Koudymov, A., Pachipulusu, R., & Khan, M. A. (August 2002). GaN/AlGaN P-Channel Inverted Heterostructure JFET. IEEE Electron Device Letters, 23 (8), 452-454. http://dx.doi.org/10.1109/LED.2002.801295