AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor

Author(s)

M. A. Khan
X. Hu
Grigory Simin, University of South Carolina - ColumbiaFollow
A, Lunev
J. Yang
R. Gaska
M. S. Shur

Document Type

Article

Publication Info

Published in IEEE Electron Device Letters, Volume 21, Issue 2, 2000, pages 63-65.

©IEEE Electron Device Letters 2000, Institute of Electrical and Electronics Engineers (IEEE).

Khan, M. A., Hu, X., Simin, G., Lunev, A., Yang, J., Gaska, R., & Shur, M. S. (February 2000). AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor, IEEE Electron Device Letters, 21 (2), 63-65. http://dx.doi.org/10.1109/55.821668

Rights

©IEEE Electron Device Letters 2000, Institute of Electrical and Electronics Engineers (IEEE).

Khan, M. A., Hu, X., Simin, G., Lunev, A., Yang, J., Gaska, R., & Shur, M. S. (February 2000). AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor, IEEE Electron Device Letters, 21 (2), 63-65. http://dx.doi.org/10.1109/55.821668