Low-Frequency Noise in AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors

Author(s)

S. L. Rumyantsev
N. Pala
M. S. Shur
M. E. Levinshtein
P. A. Ivanov
M. Asif Khan
Grigory Simin, University of South Carolina - ColumbiaFollow
J. Yang
X. Hu
A. Tarakji
R. Gaska

Document Type

Article

Publication Info

Published in Fluctuation and Noise Letters, Volume 1, Issue 4, 2001, pages L221-L226.

©Fluctuation and Noise Letters 2001, World Scientific Publishing Company.

Rumyantsev, S. L., Pala, N., Shur, M. S., Levinshtein, M. E., Ivanov, P. A., Khan, M. A., Simin, G., Yang, J., Hu, X., Tarakji, A., & Gaska, R. (December 2001). Low-Frequency Noise in AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors. Fluctuation and Noise Letters, 1 (4), L221-L226. http://dx.doi.org/10.1142/S0219477501000469

Rights

©Fluctuation and Noise Letters 2001, World Scientific Publishing Company.

Rumyantsev, S. L., Pala, N., Shur, M. S., Levinshtein, M. E., Ivanov, P. A., Khan, M. A., Simin, G., Yang, J., Hu, X., Tarakji, A., & Gaska, R. (December 2001). Low-Frequency Noise in AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors. Fluctuation and Noise Letters, 1 (4), L221-L226. http://dx.doi.org/10.1142/S0219477501000469