Low Threshold-14 W/mm ZrO₂/AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors

Author(s)

Shiva Rai
Vinod AdivarahanFollow
Naveen Tipirneni
Alexei Koudymov
Jinwei Yang
Grigory Simin, University of South Carolina - ColumbiaFollow
M. Asif Khan

Document Type

Article

Publication Info

Published in Japanese Journal of Applied Physics, Volume 45, Issue 1-6A, 2006, pages 4985-4987.

©Japanese Journal of Applied Physics 2006, Japanese Society of Applied Physics.

Rai, S., Adivarahan, V., Tipirneni, N., Koudymov, a., Yang, J., Simin, g., & Khan, M. A. (2006). Low Threshold-14 W/mm ZrO₂/AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors. Japanese Journal of Applied Physics, 45 (1-6A), 4985-4987. http://dx.doi.org/10.1143/JJAP.45.4985

Rights

©Japanese Journal of Applied Physics 2006, Japanese Society of Applied Physics.

Rai, S., Adivarahan, V., Tipirneni, N., Koudymov, a., Yang, J., Simin, g., & Khan, M. A. (2006). Low Threshold-14 W/mm ZrO₂/AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors. Japanese Journal of Applied Physics, 45 (1-6A), 4985-4987. http://dx.doi.org/10.1143/JJAP.45.4985