High-Power Switching Using III-Nitride Metal-Oxide-Semiconductor Heterostrucstures

Author(s)

Grigory Simin, University of South Carolina - ColumbiaFollow
M. A. Khan
M. S. Shur
R. Gaska

Document Type

Article

Publication Info

Published in International Journal of High Speed Electronics and Systems, Volume 16, Issue 2, 2006, pages 455-468.

©International Journal of High Speed Electronics and Systems 2006, World Scientific Publishing.

Simin, G., Khan, M. A., Shur, M. S., & GAska, R. (2006). High-Power Switching Using III-Nitride Metal-Oxide-Semiconductor Heterostrucstures. International Journal of High Speed Electronics and Systems, 16 (2), 455. http://dx.doi.org/10.1142/S0129156406003783

Rights

©International Journal of High Speed Electronics and Systems 2006, World Scientific Publishing.

Simin, G., Khan, M. A., Shur, M. S., & GAska, R. (2006). High-Power Switching Using III-Nitride Metal-Oxide-Semiconductor Heterostrucstures. International Journal of High Speed Electronics and Systems, 16 (2), 455. http://dx.doi.org/10.1142/S0129156406003783