Generation-Recombination Noise in GaN-Based Devices

Author(s)

S. L. Rumyantsev
N. Pala
M. S. Shur
M. E. Levinshtein
R. Gaska
M. Asif Khan
Grigory Simin, University of South Carolina - ColumbiaFollow

Document Type

Article

Publication Info

Published in International Journal of High Speed Electronics and Systems, Volume 14, Issue 1, 2004, pages 175-196.

©International Journal of High Speed Electronics and Systems 2004, World Scientific Publishing.

Rumyantsev, S. L., Pala, N., Shur, M. S., Levinshtein, M. E., Gaska, R., Khan, M. A., & Simin, G. (March 2004). Generation-Recombination Noise in GaN-Based Devices. International Journal of High Speed Electronics and Systems, 14 (1), 175. http://dx.doi.org/10.1142/S0129156404002296

Rights

©International Journal of High Speed Electronics and Systems 2004, World Scientific Publishing.

Rumyantsev, S. L., Pala, N., Shur, M. S., Levinshtein, M. E., Gaska, R., Khan, M. A., & Simin, G. (March 2004). Generation-Recombination Noise in GaN-Based Devices. International Journal of High Speed Electronics and Systems, 14 (1), 175. http://dx.doi.org/10.1142/S0129156404002296