High-Power Operation of III-N MOSHFET RF Switches

Author(s)

Z. Yang
A. Koudymov
V. AdivarahanFollow
J. Yang
Grigory Simin, University of South Carolina - ColumbiaFollow
M. Asif Khan

Document Type

Article

Publication Info

Published in IEEE Microwave and Wireless Components Letters, Volume 15, Issue 12, 2005, pages 850-852.

©IEEE Microwave and Wireless Components 2005, Institute of Electrical and Electronics Engineers (IEEE).

Yang, Z., Koudymov, A., Adivarahan, V., Yang, J., Simin, G. & Khan, M. A. (December 2005). High-Power Operation of III-N MOSHFET RF Switches. IEEE Microwave and Wireless Components Letters, 15 (12), 850-852. http://dx.doi.org/10.1109/LMWC.2005.860011

Rights

©IEEE Microwave and Wireless Components 2005, Institute of Electrical and Electronics Engineers (IEEE).

Yang, Z., Koudymov, A., Adivarahan, V., Yang, J., Simin, G. & Khan, M. A. (December 2005). High-Power Operation of III-N MOSHFET RF Switches. IEEE Microwave and Wireless Components Letters, 15 (12), 850-852. http://dx.doi.org/10.1109/LMWC.2005.860011