Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications

Author(s)

M. Asif Khan
Grigory Simin, University of South Carolina - ColumbiaFollow
J. Yang
Jinaping Zhang
A. Koudymov
M. S. Shur
R. Gaska
Xuhong Hu
A. Tarakji

Document Type

Article

Publication Info

Published in IEEE Transactions on Microwave Theory and Techniques, Volume 51, Issue 2, 2003, pages 624-633.

©IEEE Transactions on Microwave Theory and Techniques 2003, Institute of Electrical and Electronics Engineers (IEEE).

Khan, M. A., Simin, G., Yang, J., Zhang, J., Koudymov, A., Shur, M. S., Gaska, R., Hu, X., & Tarakji, A. (February 2003). Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications. IEEE Transactions on Microwave Theory and Techniques, 51 (2), 624-633. http://dx.doi.org/10.1109/TMTT.2002.807681

Rights

©IEEE Transactions on Microwave Theory and Techniques 2003, Institute of Electrical and Electronics Engineers (IEEE).

Khan, M. A., Simin, G., Yang, J., Zhang, J., Koudymov, A., Shur, M. S., Gaska, R., Hu, X., & Tarakji, A. (February 2003). Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications. IEEE Transactions on Microwave Theory and Techniques, 51 (2), 624-633. http://dx.doi.org/10.1109/TMTT.2002.807681