Wide Bandgap Devices with Non-Ohmic Contacts
The paper proposes a novel approach to fabricate high performance microwave devices with non-ohmic contacts. Low contact impedance is achieved through a strong capacitive coupling between the metal electron and the high-density two- dimensional electron gas. This approach allows for a new device design with non-annealed or low-temperature annealed contacts and gate alignment-free technology. The application of capacitively coupled contacts for high-power microwave devices is demonstrated.
Published in ECS Transactions, Volume 8, Issue 5, 2006, pages 881-887.
© The Electrochemical Society, Inc. 2006. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Transactions.
Publisher’s Version: http://dx.doi.org/10.1149/1.2357228
©ECS Transactions 2006, Electrochemical Society.
Simin, G. (2006). Wide Bandgap Devices with Non-Ohmic Contacts. ECS Transactions, 8 (5), 881-887. http://dx.doi.org/10.1149/1.2357228