The real-space transfer effect in a SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure (MOSH) from the two-dimensional (2D) electron gas at the heterointerface to the oxide-semiconductor interface has been demonstrated and explained. The effect occurs at high positive gate bias and manifests itself as an additional step in the capacitance-voltage (C‐V) characteristic. The real-space transfer effect limits the achievable maximum 2D electron gas density in the device channel. We show that in MOSH structures the maximum electron gas density exceeds up to two times that at the equilibrium (zero bias) condition. Correspondingly, a significant increase in the maximum channel current (up to two times compared to conventional Schottky-gate structures) can be achieved. The real-space charge transfer effect in MOSH structures also opens up a way to design novel devices such as variable capacitors, multistate switches, memory cells, etc.
Published in Applied Physics Letters, Volume 87, Issue 4, 2005, pages #043505-.
©Applied Physics Letters 2005, AIP Publishing.
Saygi, S., Koudymov, A., Adivarahan, V., Yang, J., Simin, G., Khan, M. A., Deng, J., Gaska, R., & Shur, M. S. (25 July 2005). Real-Space Electron Transfer in III-Nitride Metal-Oxide-Semiconductor-Heterojunction Structures. Applied Physics Letters, 87 (4), #043505. http://dx.doi.org/10.1063/1.2001745