Results of two-dimensional numerical simulations of gate lag and current collapse in GaN heterostructurefield-effect transistors are presented. Simulation results clearly show that current collapse takes place only if an enhanced trapping occurs under the gate edges. Hot electrons play an instrumental role in the collapse mechanism. The simulation results also link the current collapse with electrons spreading into the buffer layer and confirm that a better electron localization (as in a double heterostructurefield-effect transistor) can dramatically reduce current collapse.
Published in Applied Physics Letters, Volume 85, Issue 20, 2004, pages 4780-4782.
©Applied Physics Letters 2004, AIP Publishing.
Braga, N., Mickevicius, R., Gaska, R., Shur, M. S., Khan, M. A., & Simin, G. (15 November 2004). Simulation of Gate Lag and Current Collapse in Gallium Nitride Field-Effect Transistors. Applied Physics Letters, 85 (20), 4780-4782. http://dx.doi.org/10.1063/1.1823018