We present an experimental and theoretical study of nonresonant detection of subterahertz radiation in GaAs/AlGaAs and GaN/AlGaN heterostructurefield effect transistors. The experiments were performed in a wide range of temperatures (8–300 K) and for frequencies ranging from 100 to 600 GHz. The photoresponse measured as a function of the gate voltage exhibited a maximum near the threshold voltage. The results were interpreted using a theoretical model that shows that the maximum in photoresponse can be explained by the combined effect of exponential decrease of the electron density and the gate leakage current.
Published in Journal of Applied Physics, Volume 91, Issue 11, 2002, pages 9346-9353.
©Journal of Applied Physics 2002, American Institute of Physics (AIP).
Knap, W., Kachorovskii, V., Deng, Y., Rumyantsev, S., Lu, J-Q., Gaska, R., Shur, M. S., Simin, G., Hu, X., Khan, M. A., Saylor, C. A., & Brunel, L. C. (1 June 2002). Nonresonant Detection of Terahertz Radiation in Field Effect Transistors. Journal of Applied Physics, 91 (11), 9346-9353. http://dx.doi.org/10.1063/1.1468257