Time-resolvedphotoluminescence(PL)dynamics has been studied in AlInGaN/AlInGaN multiple quantum wells(MQWs) grown by a pulsed metalorganic chemical vapor deposition (PMOCVD) procedure. The PL decay kinetics was found to be sensitive to the emission energy and temperature. The PL decay time increases with decreasing emission energy, which is a characteristic of localized carrier/exciton recombination due to alloy fluctuations. Its temperature dependence shows radiative recombination to be the dominant process at low temperatures, indicating a high quality of PMOCVD grown quaternary AlInGaN MQWs and establishing them as promising structures for the active region of deep ultraviolet light emitting diodes.
Published in Applied Physics Letters, Volume 80, Issue 21, 2002, pages 3943-3945.
©Applied Physics Letters 2002, American Institute of Physics (AIP).
Ryu, M-Y., Chen, C. Q., Kuokstis, E., Yang, J. W., Simin, G., Khan, M. A., Sim, G. G., & Yu, P. W. (27 May 2002). Time-Resolved Photoluminescence of Quaternary AlInGaN-Based Multiple Quantum Wells. Applied Physics Letters, 80 (21), 3943-3945. http://dx.doi.org/10.1063/1.1482415