RF Transmission Line Method for Wide-Bandgap Heterostructures, A. Koudymov, N. Pala, V. Tokranov, S. Oktyabrsky, M. Gaevski, Rishabh Jain, J. Yang, X. Hu, M. Shur, R. Gaska, Grigory Simin
Faculty Publications

Drain-to-Gate Field Engineering for Improved Frequency Response of GaN-Based HEMTs, N. Pala, X. Hu, J. Deng, J. Yang, R. Gaska, Z. Yang, A. Koudymov, M. S. Shur, Grigory Simin
Faculty Publications

Generation-Recombination Noise in GaN-Based Devices, S. L. Rumyantsev, N. Pala, M. S. Shur, M. E. Levinshtein, R. Gaska, M. Asif Khan, Grigory Simin
Faculty Publications

Transient Response of Highly Doped Thin Channel GaN Metal-Semiconductor and Metal-Oxide-Semiconductor Field Effect Transistors, N. Pala, S. L. Rumyantsev, M. S. Shur, X. Hu, A. Tarakji, R. Gaska, M. Asif Khan, Grigory Simin, J. Yang
Faculty Publications

Low-Frequency Noise in AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, M. E. Levinshtein, P. A. Ivanov, M. Asif Khan, Grigory Simin, J. Yang, X. Hu, A. Tarakji, R. Gaska
Faculty Publications

Low Frequency Noise in GaN Metal Semiconductor and Metal Oxide Semiconductor Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang
Faculty Publications

Effect of Gate Leakage Current on Noise Properties of AlGaN/GaN Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang
Faculty Publications