Time-Resolved Electroluminescence of AlGaN-Based Light-Emitting Diodes with Emission at 285 nm, M. Shatalov, A. Chitnis, V. Mandavilli, R. Pachipulusu, J. P. Zhang, V. Adivarahan, S. Wu, Grigory Simin, M. Asif Khan, G. Tamulaitis, A. Sereika, I. Yilmaz, M. S. Shur, R. Gaska
Faculty Publications

Low-Temperature Operation of AlFaN Single-Quantum-Well Light-Emitting Diodes with Deep Ultraviolet Emission at 285 nm, A. Chitnis, R. Pachipulusu, V. Mandavilli, M. Shatalov, E. Kuokstis, J. P. Zhang, V. Adivarahan, S. Wu, Grigory Simin, M. Asif Khan
Faculty Publications

Ultraviolet Light-Emitting Diodes at 340 nm using Quaternary AlInGaN Multiple Quantum Wells, V. Adivarahan, A. Chitnis, J. P. Zhang, M. Shatalov, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur
Faculty Publications

Stripe Geometry Light Emitting Diodes over Pulsed Lateral Epitaxial Overgrown GaN for Solid State White Lightning, M. Shatalov, A. Chitnis, D. Basak, J.W. Yang, Q. Fareed, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur
Faculty Publications

Band-Edge Luminesce in Quaternary AlInGaN Light-Emitting Diodes, M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J. W. Yang, Q. Fareed, Grigory Simin, A. Zakheim, M. Asif Khan, R. Gaska, M. S. Shur
Faculty Publications

High-Quality p-n Junctions with Quaternary AlInGaN/InGaN Quantum Wells, A. Chitnis, A. Kumar, M. Shatalov, V. Adivarahan, A. Lunev, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur
Faculty Publications

Enhanced Luminescence in InGaN Multiple Quantum Wells with Quaternary AlInGaN Barriers, Jianping Zhang, J. Yang, Grigory Simin, M. Shatalov, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications