Power Stability of AlGaN/GaN HFTs at 20 W/mm in the Pinched-Off Operation Mode, A. Koudymov, C. X. Wang, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

High-Power Operation of III-N MOSHFET RF Switches, Z. Yang, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

Mechanism of Current Collapse Removal in Field-Plated Nitride HFETs, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

Nanoscale Capacitance-Voltage Characterization of Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures, G. Koley, L. Lakshmanan, N. Tipirneni, M. Gaevski, A. Koudymov, Grigory Simin, Ho-Young Cha, M. G. Spencer, M. A. Khan
Faculty Publications

Stable CW Operation of Field-Plated GaN-AlGaN MOSHFETs at 19W/mm, V. Adivarahan, J. Yang, A. Koudymov, Grigory Simin, M. A. Khan
Faculty Publications

High-Power RF Switching using III-Nitride Metal-Oxide-Semiconductor Heterojunction Capacitors, Grigory Simin, A. Koudymov, Z.-J. Yang, V. Adivarahan, J. Yang, M. Asif Khan
Faculty Publications

Monolithically Integrated High-Power Broad-Band RF Switch Based on III-N Insulated Gate Transistors, A. Koudymov, S. Rai, V. Adivarahan, M. Gaevski, J. Yang, Grigory Simin, M. A. Khan
Faculty Publications

Strain-Engineered Novel III-N Electronic Devices with High Quality Dielectric/Semiconductor Interfaces, M. Asif Khan, M. S. Shur, Grigory Simin
Faculty Publications

Submicron Gate Si₃N₄/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, V. Adivarahan, M. Gaevski, W. H. Sun, H. Fatima, A. Koudymov, S. Saygi, Grigory Simin, J. Yang, M. A. Khan, A. Tarakji, M. S. Shur, R. Gaska
Faculty Publications

An Assessment of Wide Bandgap Semiconductors for Power Devices, J. L. Hudgins, Grigory Simin, Enrico Santi, M. Asif Khan
Faculty Publications

Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications, M. Asif Khan, Grigory Simin, J. Yang, Jianping Zhang, A. Koudymov, M. S. Shur, R. Gaska, Xuhong Hu, A. Tarakji
Faculty Publications

Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications, M. Asif Khan, Grigory Simin, J. Yang, Jianping Zhang, A. Koudymov, M. S. Shur, R. Gaska, Xuhong Hu, A. Tarakji
Faculty Publications

Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications, M. Asif Khan, Grigory Simin, J. Yang, Jinaping Zhang, A. Koudymov, M. S. Shur, R. Gaska, Xuhong Hu, A. Tarakji
Faculty Publications

SiO₂/AlGaN/InGaN/GaN MOSDHFETs, Grigory Simin, A. Koudymov, H. Fatima, Jianping Zhang, J. Yang, M. Asif Khan, X. Hu, A. Tarakji, R. Gaska, M. S. Shur
Faculty Publications

Low-Loss High Power RF Switching using Multifinger AlGaN/GaN MOSHFETs, A. Koudymov, Xuhong Hu, K. Simin, Grigory Simin, M. Ali, J. Yang, M. Asif Khan
Faculty Publications

Time-Resolved Photoluminescence of Quaternary AlInGaN-Based Multiple Quantum Wells, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan, G. G. Sim, P. W. Yu
Faculty Publications

324 nm Light Emitting Diodes with Milliwatt Powers, Ashay Chitnis, Jian Ping Zhang, Vinod Adivarahan, Wu Shuai, Jie Sun, Maxim Shatalov, Jin Wei Yang, Grigory Simin, Muhammad Asif Khan
Faculty Publications

High-Temperature Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors, Grigory Simin, A. Tarakji, X. Hu, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications

Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers, J. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur
Faculty Publications

Strain Energy Band Engineering Approach to AlN/GaN/InN Heterojunction Devices, M. S. Shur, R. Gaska, J. W. Yang, Grigory Simin, M. A. Khan
Faculty Publications