Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET, V. Adivarahan, M. Gaevski, A. Koudymov, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

Power Stability of AlGaN/GaN HFTs at 20 W/mm in the Pinched-Off Operation Mode, A. Koudymov, C. X. Wang, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

The 1.6-kV AlGaN/GaN HFETs, N. Tipirneni, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

III-Nitride Transistors with Capacitively Coupled Contacts, Grigory Simin, Z.-J. Yang, A. Koudymov, V. Adivarahan, M. Asif Khan
Faculty Publications

High-Power Operation of III-N MOSHFET RF Switches, Z. Yang, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

Mechanism of Current Collapse Removal in Field-Plated Nitride HFETs, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

Stable CW Operation of Field-Plated GaN-AlGaN MOSHFETs at 19W/mm, V. Adivarahan, J. Yang, A. Koudymov, Grigory Simin, M. A. Khan
Faculty Publications

Stable 20 W/mm AlGaN-GaN MOSHFET, Grigory Simin, V. Adivarahan, J. Yang, A. Koudymov, S. Rai, M. Asif Khan
Faculty Publications

Performance Stability of High-power III-Nitride Metal-Oxide Semiconductor-Heterostructure Field-Effect Transistors, S. Saygi, H. Fatima, X. He, S. Rai, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

High-Power RF Switching using III-Nitride Metal-Oxide-Semiconductor Heterojunction Capacitors, Grigory Simin, A. Koudymov, Z.-J. Yang, V. Adivarahan, J. Yang, M. Asif Khan
Faculty Publications

Monolithically Integrated High-Power Broad-Band RF Switch Based on III-N Insulated Gate Transistors, A. Koudymov, S. Rai, V. Adivarahan, M. Gaevski, J. Yang, Grigory Simin, M. A. Khan
Faculty Publications

Submicron Gate Si₃N₄/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, V. Adivarahan, M. Gaevski, W. H. Sun, H. Fatima, A. Koudymov, S. Saygi, Grigory Simin, J. Yang, M. A. Khan, A. Tarakji, M. S. Shur, R. Gaska
Faculty Publications

Deep Ultraviolet Light-Emitting Diodes using Quaternary AllnGaN Multiple Quantum Wells, M. Shatalov, J. Zhang, A. S. Chitnis, V. Adivarahan, J. Yang, Grigory Simin, M. A. Khan
Faculty Publications

Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact to p GaN for High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska
Faculty Publications