Multigate GaN RF Switches With Capacitively Coupled Contacts, Grigory Simin, B. Khan, Jingbo Wang, A. Koudymov, M. Gaevski, R. Jain, J. Yang, X. Hu, R. Gaska, M. Shur
Faculty Publications

HfO₂-III-Nitride RF Switch with Capacitively Coupled Contacts, A. Koudymov, N. Pala, V. Tokranov, S. Oktyabrsky, M. Gaevski, R. Jain, J. Yang, X. Hu, M. Shur, R. Gaska, Grigory Simin
Faculty Publications

RF Transmission Line Method for Wide-Bandgap Heterostructures, A. Koudymov, N. Pala, V. Tokranov, S. Oktyabrsky, M. Gaevski, Rishabh Jain, J. Yang, X. Hu, M. Shur, R. Gaska, Grigory Simin
Faculty Publications

Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET, V. Adivarahan, M. Gaevski, A. Koudymov, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

Monolithically Integrated High-Power Broad-Band RF Switch Based on III-N Insulated Gate Transistors, A. Koudymov, S. Rai, V. Adivarahan, M. Gaevski, J. Yang, Grigory Simin, M. A. Khan
Faculty Publications

Submicron Gate Si₃N₄/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, V. Adivarahan, M. Gaevski, W. H. Sun, H. Fatima, A. Koudymov, S. Saygi, Grigory Simin, J. Yang, M. A. Khan, A. Tarakji, M. S. Shur, R. Gaska
Faculty Publications