Mobility Enhancement in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors, M. E. Levinshtein, P. A. Ivanov, M. Asif Khan, Grigory Simin, J. Zhang, X. Hu, J. Yang
Faculty Publications

On the Lower Frequency Noise Mechanisms in GaN/AlGaN HFETs, S. L. Rumyantsev, Y. Deng, S. Shur, M. E. Levinshtein, M. A. Khan, Grigory Simin, J. Yang, X. Hu, R. Gaska
Faculty Publications

Low-Frequency Noise in AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, M. E. Levinshtein, P. A. Ivanov, M. Asif Khan, Grigory Simin, J. Yang, X. Hu, A. Tarakji, R. Gaska
Faculty Publications

Drift Mobility of Electrons in AlGaN/GaN MOSHFET, P. A. Ivanov, M. E. Levinshtein, Grigory Simin, X. Hu, J. Yang, M. Asif Khan, S. L. Rumyantsev, M. S. Shur, R. Gaska
Faculty Publications

Thin n-GaN Films with Low Level of 1/f Noise, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. A. Khan, Grigory Simin, X. Hu, J. Yang
Faculty Publications

Effect of Gate Leakage Current on Noise Properties of AlGaN/GaN Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang
Faculty Publications

Low 1/f Noise in AlGaN/GaN HFETs on SiC Substrates, S. Rumyantsev, M. E. Levinshtein, R. Gaska, M. S. Shur, A. Khan, J. W. Yang, Grigory Simin, A. Ping, T. Adesida
Faculty Publications

Simple Method to Determine the Main Gunn Domain Parameters, M. E. Levinshtein, Grigory Simin
Faculty Publications