High-Power Switching Using III-Nitride Metal-Oxide-Semiconductor Heterostrucstures, Grigory Simin, M. A. Khan, M. S. Shur, R. Gaska
Faculty Publications

Stable CW Operation of Field-Plated GaN-AlGaN MOSHFETs at 19W/mm, V. Adivarahan, J. Yang, A. Koudymov, Grigory Simin, M. A. Khan
Faculty Publications

Monolithically Integrated High-Power Broad-Band RF Switch Based on III-N Insulated Gate Transistors, A. Koudymov, S. Rai, V. Adivarahan, M. Gaevski, J. Yang, Grigory Simin, M. A. Khan
Faculty Publications

Submicron Gate Si₃N₄/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, V. Adivarahan, M. Gaevski, W. H. Sun, H. Fatima, A. Koudymov, S. Saygi, Grigory Simin, J. Yang, M. A. Khan, A. Tarakji, M. S. Shur, R. Gaska
Faculty Publications

On the Lower Frequency Noise Mechanisms in GaN/AlGaN HFETs, S. L. Rumyantsev, Y. Deng, S. Shur, M. E. Levinshtein, M. A. Khan, Grigory Simin, J. Yang, X. Hu, R. Gaska
Faculty Publications

Millimeter-Wave High-Power 0.25-µm Gate-Length AlGaN/GaN HEMTs on SiC Substrates, R. S. Schwindt, V. Kumar, A. Kuliev, Grigory Simin, J. W. Yang, M. A. Khan, M. E. Muir, I. Adesida
Faculty Publications

AlGaN/GaN Heterostructure Field-Effect Transistors on Single-Crystal Bulk AlN, X. Hu, J. Deng, N. Pala, R. Gaska, M. S. Shur, C. Q. Chen, J. Yang, Grigory Simin, M. A. Khan, J. C. Rojo, L. J. Schowalter
Faculty Publications

DC and Microwave Performance of a GaN/AlGaN MOSHFET under High Temperature Stress, A. Tarakji, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. A. Khan, M. S. Shur, R. Gaska
Faculty Publications

Deep Ultraviolet Light-Emitting Diodes using Quaternary AllnGaN Multiple Quantum Wells, M. Shatalov, J. Zhang, A. S. Chitnis, V. Adivarahan, J. Yang, Grigory Simin, M. A. Khan
Faculty Publications

Thin n-GaN Films with Low Level of 1/f Noise, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. A. Khan, Grigory Simin, X. Hu, J. Yang
Faculty Publications

Strain Energy Band Engineering Approach to AlN/GaN/InN Heterojunction Devices, M. S. Shur, R. Gaska, J. W. Yang, Grigory Simin, M. A. Khan
Faculty Publications

7.5 kW/mm² Current Swith using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates, Grigory Simin, X. Hu, N. Ilinskaya, A. Kumar, A. Koudymov, J. Zhang, M. A. Khan, R. Gaska, M. S. Shur
Faculty Publications

Enhancement Mode AlGaN/GaN HFET with Selectively Grown PN Junction Gate, X. Hu, Grigory Simin, J. Yang, M. A. Khan, R. Gaska, M. S. Shur
Faculty Publications

AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor, M. A. Khan, X. Hu, Grigory Simin, A, Lunev, J. Yang, R. Gaska, M. S. Shur
Faculty Publications