Multigate GaN RF Switches With Capacitively Coupled Contacts, Grigory Simin, B. Khan, Jingbo Wang, A. Koudymov, M. Gaevski, R. Jain, J. Yang, X. Hu, R. Gaska, M. Shur
Faculty Publications

HfO₂-III-Nitride RF Switch with Capacitively Coupled Contacts, A. Koudymov, N. Pala, V. Tokranov, S. Oktyabrsky, M. Gaevski, R. Jain, J. Yang, X. Hu, M. Shur, R. Gaska, Grigory Simin
Faculty Publications

RF Transmission Line Method for Wide-Bandgap Heterostructures, A. Koudymov, N. Pala, V. Tokranov, S. Oktyabrsky, M. Gaevski, Rishabh Jain, J. Yang, X. Hu, M. Shur, R. Gaska, Grigory Simin
Faculty Publications

Cryogenic RF Switch using III-Nitride MOSHFETs, Grigory Simin, A. Koudymov, Z. Yang, X. Hu, J. Yang, M. Shur, R. Gaska
Faculty Publications

Analytical HFET I-V Model in Presence of Current Collapse, A. Koudymov, M. S. Shur, Grigory Simin, Kanin Chu, P.C. Chao, Taehun Lee, J. Jimenez, A. Balistreri
Faculty Publications

Current Collapse and Reliability of III-N Heterostructure Field Effect Transistors, A. Koudymov, M. S. Shur, Grigory Simin, R. Gaska
Faculty Publications

Compact Model of Current Collapse in Heterostructure Field-Effect Transistors, A. Koudymov, M. S. Shur, Grigory Simin
Faculty Publications

Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET, V. Adivarahan, M. Gaevski, A. Koudymov, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

Power Stability of AlGaN/GaN HFTs at 20 W/mm in the Pinched-Off Operation Mode, A. Koudymov, C. X. Wang, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

RF-Enhanced Contacts to Wide-Bandgap Devices, Grigory Simin, Z.-J. Yang
Faculty Publications

The 1.6-kV AlGaN/GaN HFETs, N. Tipirneni, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

III-Nitride Transistors with Capacitively Coupled Contacts, Grigory Simin, Z.-J. Yang, A. Koudymov, V. Adivarahan, M. Asif Khan
Faculty Publications

High-Power Switching Using III-Nitride Metal-Oxide-Semiconductor Heterostrucstures, Grigory Simin, M. A. Khan, M. S. Shur, R. Gaska
Faculty Publications

Low Threshold-14 W/mm ZrO₂/AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors, Shiva Rai, Vinod Adivarahan, Naveen Tipirneni, Alexei Koudymov, Jinwei Yang, Grigory Simin, M. Asif Khan
Faculty Publications

Field-Plate Engineering for HFETs, S. Karmalkar, M. S. Shur, Grigory Simin, M. Asif Khan
Faculty Publications

High-Power Operation of III-N MOSHFET RF Switches, Z. Yang, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

Mechanism of Current Collapse Removal in Field-Plated Nitride HFETs, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

Stable CW Operation of Field-Plated GaN-AlGaN MOSHFETs at 19W/mm, V. Adivarahan, J. Yang, A. Koudymov, Grigory Simin, M. A. Khan
Faculty Publications

Stable 20 W/mm AlGaN-GaN MOSHFET, Grigory Simin, V. Adivarahan, J. Yang, A. Koudymov, S. Rai, M. Asif Khan
Faculty Publications

Performance Stability of High-power III-Nitride Metal-Oxide Semiconductor-Heterostructure Field-Effect Transistors, S. Saygi, H. Fatima, X. He, S. Rai, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

High-Power RF Switching using III-Nitride Metal-Oxide-Semiconductor Heterojunction Capacitors, Grigory Simin, A. Koudymov, Z.-J. Yang, V. Adivarahan, J. Yang, M. Asif Khan
Faculty Publications

Monolithically Integrated High-Power Broad-Band RF Switch Based on III-N Insulated Gate Transistors, A. Koudymov, S. Rai, V. Adivarahan, M. Gaevski, J. Yang, Grigory Simin, M. A. Khan
Faculty Publications

Strain-Engineered Novel III-N Electronic Devices with High Quality Dielectric/Semiconductor Interfaces, M. Asif Khan, M. S. Shur, Grigory Simin
Faculty Publications

Dynamic Current-Voltage Characteristics of III-N HFETs, A. Koudymov, Grigory Simin, M. Asif Khan, A. Tarakji, M. S. Shur
Faculty Publications

Submicron Gate Si₃N₄/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, V. Adivarahan, M. Gaevski, W. H. Sun, H. Fatima, A. Koudymov, S. Saygi, Grigory Simin, J. Yang, M. A. Khan, A. Tarakji, M. S. Shur, R. Gaska
Faculty Publications

Large-Signal Linearity in III-N MOSDHFETs, A. Tarakji, H. Fatima, X. Hu, J.-P. Zhang, Grigory Simin, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications

Mobility Enhancement in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors, M. E. Levinshtein, P. A. Ivanov, M. Asif Khan, Grigory Simin, J. Zhang, X. Hu, J. Yang
Faculty Publications

On the Lower Frequency Noise Mechanisms in GaN/AlGaN HFETs, S. L. Rumyantsev, Y. Deng, S. Shur, M. E. Levinshtein, M. A. Khan, Grigory Simin, J. Yang, X. Hu, R. Gaska
Faculty Publications

An Assessment of Wide Bandgap Semiconductors for Power Devices, J. L. Hudgins, Grigory Simin, Enrico Santi, M. Asif Khan
Faculty Publications

Millimeter-Wave High-Power 0.25-µm Gate-Length AlGaN/GaN HEMTs on SiC Substrates, R. S. Schwindt, V. Kumar, A. Kuliev, Grigory Simin, J. W. Yang, M. A. Khan, M. E. Muir, I. Adesida
Faculty Publications

Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications, M. Asif Khan, Grigory Simin, J. Yang, Jianping Zhang, A. Koudymov, M. S. Shur, R. Gaska, Xuhong Hu, A. Tarakji
Faculty Publications

Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications, M. Asif Khan, Grigory Simin, J. Yang, Jianping Zhang, A. Koudymov, M. S. Shur, R. Gaska, Xuhong Hu, A. Tarakji
Faculty Publications

Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications, M. Asif Khan, Grigory Simin, J. Yang, Jinaping Zhang, A. Koudymov, M. S. Shur, R. Gaska, Xuhong Hu, A. Tarakji
Faculty Publications

AlGaN/GaN Heterostructure Field-Effect Transistors on Single-Crystal Bulk AlN, X. Hu, J. Deng, N. Pala, R. Gaska, M. S. Shur, C. Q. Chen, J. Yang, Grigory Simin, M. A. Khan, J. C. Rojo, L. J. Schowalter
Faculty Publications

GaN/AlGaN P-Channel Inverted Heterostructure JFET, Maxim Shatalov, Grigory Simin, Jianping Zhang, Vinod Adivarahan, A. Koudymov, R. Pachipulusu, M. Asif Khan
Faculty Publications

SiO₂/AlGaN/InGaN/GaN MOSDHFETs, Grigory Simin, A. Koudymov, H. Fatima, Jianping Zhang, J. Yang, M. Asif Khan, X. Hu, A. Tarakji, R. Gaska, M. S. Shur
Faculty Publications

DC and Microwave Performance of a GaN/AlGaN MOSHFET under High Temperature Stress, A. Tarakji, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. A. Khan, M. S. Shur, R. Gaska
Faculty Publications

Low-Loss High Power RF Switching using Multifinger AlGaN/GaN MOSHFETs, A. Koudymov, Xuhong Hu, K. Simin, Grigory Simin, M. Ali, J. Yang, M. Asif Khan
Faculty Publications

AlGaN/GaN HEMTs on SiC with f_T of over 120 GHz, V. Kumar, W. Lu, R. Schwindt, A. Kuliev, Grigory Simin, J. Yang, M. Asif Khan, I. Adesida
Faculty Publications

Maximum Current in Nitride-Based Heterostructure Field-Effect Transistors, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, R. Gaska
Faculty Publications

Deep Ultraviolet Light-Emitting Diodes using Quaternary AllnGaN Multiple Quantum Wells, M. Shatalov, J. Zhang, A. S. Chitnis, V. Adivarahan, J. Yang, Grigory Simin, M. A. Khan
Faculty Publications

Low-Frequency Noise in AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, M. E. Levinshtein, P. A. Ivanov, M. Asif Khan, Grigory Simin, J. Yang, X. Hu, A. Tarakji, R. Gaska
Faculty Publications

High-Temperature Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors, Grigory Simin, A. Tarakji, X. Hu, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications

Drift Mobility of Electrons in AlGaN/GaN MOSHFET, P. A. Ivanov, M. E. Levinshtein, Grigory Simin, X. Hu, J. Yang, M. Asif Khan, S. L. Rumyantsev, M. S. Shur, R. Gaska
Faculty Publications

Si₃N₄/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, R. Gaska
Faculty Publications

Thin n-GaN Films with Low Level of 1/f Noise, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. A. Khan, Grigory Simin, X. Hu, J. Yang
Faculty Publications

Mechanism of Radio-Frequency Current Collapse in GaN-AlGaN Field-Effect Transistors, A. Tarakji, Grigory Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications

Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact to p GaN for High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska
Faculty Publications

Large Periphery High-Power AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC with Oxide-Bridging, Grigory Simin, X. Hu, N. Ilinskaya, J. Zhang, A. Tarakji, A. Kumar, J. Yang, M. Asif Khan, R. Gaska, M. S. Shur
Faculty Publications

Highly Doped Thin-Channel GaN-Metal-Semiconductor Field-Effect Transistors, R. Gaska, M. S. Shur, X. Hu, J. W. Yang, A. Tarakji, Grigory Simin, A. Khan, J. Deng, T. Werner, S. Rumyantsev, N. Pala
Faculty Publications

Strain Energy Band Engineering Approach to AlN/GaN/InN Heterojunction Devices, M. S. Shur, R. Gaska, J. W. Yang, Grigory Simin, M. A. Khan
Faculty Publications

Effect of Gate Leakage Current on Noise Properties of AlGaN/GaN Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang
Faculty Publications

7.5 kW/mm² Current Swith using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates, Grigory Simin, X. Hu, N. Ilinskaya, A. Kumar, A. Koudymov, J. Zhang, M. A. Khan, R. Gaska, M. S. Shur
Faculty Publications

AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors on SiC Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, M. S. Shur
Faculty Publications

Transient Processes in AlGaN/GaN Heterostructure Field Effect Transistors, S. L. Rumyantsev, M. S. Shur, R. Gaska, X. Hu, A. Khan, Grigory Simin, J. Yang, N. Zhang, S. DenBaars, U.K. Mishra
Faculty Publications

Enhancement Mode AlGaN/GaN HFET with Selectively Grown PN Junction Gate, X. Hu, Grigory Simin, J. Yang, M. A. Khan, R. Gaska, M. S. Shur
Faculty Publications

AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor, M. A. Khan, X. Hu, Grigory Simin, A, Lunev, J. Yang, R. Gaska, M. S. Shur
Faculty Publications

Low-Frequency Noise in AlGaN/GaN MOS-HFETs, N. Pala, R. Gaska, S. Rumyantsev, M. S. Shur, M. Asif Khan, X. Hu, Grigory Simin, J. Yang
Faculty Publications

Low 1/f Noise in AlGaN/GaN HFETs on SiC Substrates, S. Rumyantsev, M. E. Levinshtein, R. Gaska, M. S. Shur, A. Khan, J. W. Yang, Grigory Simin, A. Ping, T. Adesida
Faculty Publications

Energy Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN Heterostructure, M. Asif Khan, J. W. Yang, Grigory Simin, H. zur Loye, R. Bicknell-Tassius, R. Gaska, M. S. Shur, G. Tamulaitis, A. Zukauskas
Faculty Publications

Deriving of Single Intensive Picosecond Optical Pulses from a High-Power Gain-Switched Laser Diode by Spectral Filtering, S. N. Vainshtein, Grigory Simin, J. T. Kostamovaara
Faculty Publications

Simple Method to Determine the Main Gunn Domain Parameters, M. E. Levinshtein, Grigory Simin
Faculty Publications