Maximum Powers of Low-Loss Series-Shunt FET RF Switches, Z. Yang, X. Hu, J. Yang, Grigory Simin, M. Shur, R. Gaska
Faculty Publications

Drain-to-Gate Field Engineering for Improved Frequency Response of GaN-Based HEMTs, N. Pala, X. Hu, J. Deng, J. Yang, R. Gaska, Z. Yang, A. Koudymov, M. S. Shur, Grigory Simin
Faculty Publications

AlGaN/GaN/AlGaN Double Heterostructure for High-Power III-N Field-Effect Transistors, C. Q. Chen, J. P. Zhang, V. Adivarahan, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan
Faculty Publications

Digital Oxide Deposition of SiO₂ Layers for III-Nitride Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors, V. Adivarahan, S. Rai, N. Tipirneni, A. Koudymov, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

Real-Space Electron Transfer in III-Nitride Metal-Oxide-Semiconductor-Heterojunction Structures, S. Saygi, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan, J. Deng, R. Gaska, M. S. Shur
Faculty Publications

Simulation of Hot Electron and Quantum Effects in AlGaN/GaN Heterostructure Field Effect Transistors, N. Braga, R. Mickevicius, R. Gaska, H. Xu, M. S. Shur, M. Asif Khan, Grigory Simin, J. Yang
Faculty Publications

Induced Strain Mechanism of Current Collapse in AlGaN/GaN Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications

Low Frequency Noise in GaN Metal Semiconductor and Metal Oxide Semiconductor Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang
Faculty Publications