Double-Scaled Potential Profile in a Group-III Nitride Alloy Revealed by Monte Carlo Simulation of Exciton Hopping, K. Kazlauskas, G. Tamulaitis, A. Zukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska
Faculty Publications

Low Frequency Noise in Gallium Nitride Field Effect Transistors, S. L. Rumyantsev, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, J. W. Yang
Faculty Publications

GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates, M. Asif Khan, J. W. Yang, W. Knap, E. Frayssinet, X. Hu, Grigory Simin, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, R. Gaska, M. S. Shur, B. Beaumont, M. Teisseire, G. Neu
Faculty Publications

Accumulation Hole Layer in p-GaN/AlGaN Heterostructures, M. S. Shur, A. D. Bykhovski, R. Gaska, J. W. Yang, Grigory Simin, M. A. Khan
Faculty Publications

Piezoelectric Doping in AlInGaN/GaN Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, A. D. Bykovski
Faculty Publications