5-Terminal THzGaN Based Transistor with Field- And Space- Charge Control Electrodes, Grigory Simin, M. S. Shur, R. Gaska
Faculty Publications

Maximum Powers of Low-Loss Series-Shunt FET RF Switches, Z. Yang, X. Hu, J. Yang, Grigory Simin, M. Shur, R. Gaska
Faculty Publications

Drain-to-Gate Field Engineering for Improved Frequency Response of GaN-Based HEMTs, N. Pala, X. Hu, J. Deng, J. Yang, R. Gaska, Z. Yang, A. Koudymov, M. S. Shur, Grigory Simin
Faculty Publications

III-Nitride Transistors with Capacitively Coupled Contacts, Grigory Simin, Z.-J. Yang, A. Koudymov, V. Adivarahan, M. Asif Khan
Faculty Publications

AlGaN/GaN/AlGaN Double Heterostructure for High-Power III-N Field-Effect Transistors, C. Q. Chen, J. P. Zhang, V. Adivarahan, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan
Faculty Publications

Digital Oxide Deposition of SiO₂ Layers for III-Nitride Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors, V. Adivarahan, S. Rai, N. Tipirneni, A. Koudymov, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

Wide Bandgap Devices with Non-Ohmic Contacts, Grigory Simin
Faculty Publications

Real-Space Electron Transfer in III-Nitride Metal-Oxide-Semiconductor-Heterojunction Structures, S. Saygi, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan, J. Deng, R. Gaska, M. S. Shur
Faculty Publications

Simulation of Gate Lag and Current Collapse in Gallium Nitride Field-Effect Transistors, N. Braga, R. Mickevicius, R. Gaska, M. S. Shur, M. Asif Khan, Grigory Simin
Faculty Publications

Simulation of Hot Electron and Quantum Effects in AlGaN/GaN Heterostructure Field Effect Transistors, N. Braga, R. Mickevicius, R. Gaska, H. Xu, M. S. Shur, M. Asif Khan, Grigory Simin, J. Yang
Faculty Publications

Generation-Recombination Noise in GaN-Based Devices, S. L. Rumyantsev, N. Pala, M. S. Shur, M. E. Levinshtein, R. Gaska, M. Asif Khan, Grigory Simin
Faculty Publications

Double-Scaled Potential Profile in a Group-III Nitride Alloy Revealed by Monte Carlo Simulation of Exciton Hopping, K. Kazlauskas, G. Tamulaitis, A. Zukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska
Faculty Publications

Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm, Maxim Shatalov, Ashay Chitnis, Alexey Koudymov, Jianping Zhang, Vinod Adivarahan, Grigory Simin, M. Asif Khan
Faculty Publications

Low Frequency Noise in Gallium Nitride Field Effect Transistors, S. L. Rumyantsev, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, J. W. Yang
Faculty Publications

Induced Strain Mechanism of Current Collapse in AlGaN/GaN Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications

Low Frequency Noise in GaN Metal Semiconductor and Metal Oxide Semiconductor Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang
Faculty Publications

High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates, E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, Grigory Simin, X. Hu, M. Asif Khan, M. S. Shur, R. Gaska, D. Maude
Faculty Publications

GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates, M. Asif Khan, J. W. Yang, W. Knap, E. Frayssinet, X. Hu, Grigory Simin, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, R. Gaska, M. S. Shur, B. Beaumont, M. Teisseire, G. Neu
Faculty Publications

Accumulation Hole Layer in p-GaN/AlGaN Heterostructures, M. S. Shur, A. D. Bykhovski, R. Gaska, J. W. Yang, Grigory Simin, M. A. Khan
Faculty Publications

Piezoelectric Doping in AlInGaN/GaN Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, A. D. Bykovski
Faculty Publications

Low-Frequency Noise in n-GaN with High Electron Mobility, M. E. Levinshtein, S. L. Rumyantsev, D. C. Look, R. J. Molnar, M. Asif Khan, Grigory Simin, V. Adivarahan, M. S. Shur
Faculty Publications

Low-Frequency Noise in 4H-Silicon Carbide Junction Field Effect Transistors, J. W. Palmour, M. E. Levinshtein, S. L. Rumyantsev, Grigory Simin
Faculty Publications