Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications, M. Asif Khan, Grigory Simin, J. Yang, Jianping Zhang, A. Koudymov, M. S. Shur, R. Gaska, Xuhong Hu, A. Tarakji
Faculty Publications

Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications, M. Asif Khan, Grigory Simin, J. Yang, Jianping Zhang, A. Koudymov, M. S. Shur, R. Gaska, Xuhong Hu, A. Tarakji
Faculty Publications

Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications, M. Asif Khan, Grigory Simin, J. Yang, Jinaping Zhang, A. Koudymov, M. S. Shur, R. Gaska, Xuhong Hu, A. Tarakji
Faculty Publications

Low-Loss High Power RF Switching using Multifinger AlGaN/GaN MOSHFETs, A. Koudymov, Xuhong Hu, K. Simin, Grigory Simin, M. Ali, J. Yang, M. Asif Khan
Faculty Publications

Low-Loss High Power RF Switching Using Multifinger AlGaN/GaN MOSHFETs, Alexei Koudymov, Xuhong Hu, Kirill Simin, Grigory Simin, Mohammod Ali, Jinwei Yang, M. Asif Khan
Faculty Publications

AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor, Grigory Simin, Xuhong Hu, Ahmad Tarakji, Jianping Zhang, Alexey Koudymov, Salih Saygi, Jinwei Yang, M. Asif Khan, Michael S. Shur, Remis Gaska
Faculty Publications