Part of the Electrical and Computer Engineering Commons

Works by J. Zhang in Electrical and Computer Engineering

2003

Double-Scaled Potential Profile in a Group-III Nitride Alloy Revealed by Monte Carlo Simulation of Exciton Hopping, K. Kazlauskas, G. Tamulaitis, A. Zukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska
Faculty Publications

PDF

Thermal Management of AlGaN-GaN HFETs on Sapphire Using Flip-Chip Bonding with Epoxy Underfill, Jie Sun, H. Fatima, Alexei Koudymov, A. Chitnis, X. Hu, H.-M Wang, J. Zhang, Grigory Simin, J. Yang, Asif Khan
Faculty Publications

PDF

Mobility Enhancement in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors, M. E. Levinshtein, P. A. Ivanov, M. Asif Khan, Grigory Simin, J. Zhang, X. Hu, J. Yang
Faculty Publications

2002

Near-Band-Edge Photoluminescence of Wurtzite-Type AlN, E. Kuokstis, J. Zhang, Q. Fareed, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur, C. Rojo, L. Schowalter
Faculty Publications

PDF

Deep Ultraviolet Light-Emitting Diodes using Quaternary AllnGaN Multiple Quantum Wells, M. Shatalov, J. Zhang, A. S. Chitnis, V. Adivarahan, J. Yang, Grigory Simin, M. A. Khan
Faculty Publications

2001

Localization of Carriers and Polarization Effects in Quaternary AlInGaN Multiple Quantum Wells, E. Kuokstis, J. Zhang, M.-Y. Ryu, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur
Faculty Publications

PDF

Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers, J. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur
Faculty Publications

PDF

Large Periphery High-Power AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC with Oxide-Bridging, Grigory Simin, X. Hu, N. Ilinskaya, J. Zhang, A. Tarakji, A. Kumar, J. Yang, M. Asif Khan, R. Gaska, M. S. Shur
Faculty Publications

Band-Edge Luminesce in Quaternary AlInGaN Light-Emitting Diodes, M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J. W. Yang, Q. Fareed, Grigory Simin, A. Zakheim, M. Asif Khan, R. Gaska, M. S. Shur
Faculty Publications

PDF

2000

7.5 kW/mm2 Current Swith using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates, Grigory Simin, X. Hu, N. Ilinskaya, A. Kumar, A. Koudymov, J. Zhang, M. A. Khan, R. Gaska, M. S. Shur
Faculty Publications

Optical Bandgap Formation in AlInGaN Alloys, G. Tamulaitis, K. Kazlauskas, S. Juršėnas, A. Žukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska
Faculty Publications

PDF