Multigate GaN RF Switches With Capacitively Coupled Contacts, Grigory Simin, B. Khan, Jingbo Wang, A. Koudymov, M. Gaevski, R. Jain, J. Yang, X. Hu, R. Gaska, M. Shur
Faculty Publications

HfO₂-III-Nitride RF Switch with Capacitively Coupled Contacts, A. Koudymov, N. Pala, V. Tokranov, S. Oktyabrsky, M. Gaevski, R. Jain, J. Yang, X. Hu, M. Shur, R. Gaska, Grigory Simin
Faculty Publications

RF Transmission Line Method for Wide-Bandgap Heterostructures, A. Koudymov, N. Pala, V. Tokranov, S. Oktyabrsky, M. Gaevski, Rishabh Jain, J. Yang, X. Hu, M. Shur, R. Gaska, Grigory Simin
Faculty Publications

Maximum Powers of Low-Loss Series-Shunt FET RF Switches, Z. Yang, X. Hu, J. Yang, Grigory Simin, M. Shur, R. Gaska
Faculty Publications

Cryogenic RF Switch using III-Nitride MOSHFETs, Grigory Simin, A. Koudymov, Z. Yang, X. Hu, J. Yang, M. Shur, R. Gaska
Faculty Publications

Drain-to-Gate Field Engineering for Improved Frequency Response of GaN-Based HEMTs, N. Pala, X. Hu, J. Deng, J. Yang, R. Gaska, Z. Yang, A. Koudymov, M. S. Shur, Grigory Simin
Faculty Publications

Current Crowding in High Performance Low-Loss HFET RF Switches, Z. Yang, J. Wang, X. Hu, J. Yang, Grigory Simin, M. Shur, R. Gaska
Faculty Publications

Large-Signal Linearity in III-N MOSDHFETs, A. Tarakji, H. Fatima, X. Hu, J.-P. Zhang, Grigory Simin, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications

Thermal Management of AlGaN-GaN HFETs on Sapphire Using Flip-Chip Bonding with Epoxy Underfill, Jie Sun, H. Fatima, Alexei Koudymov, A. Chitnis, X. Hu, H.-M Wang, J. Zhang, Grigory Simin, J. Yang, Asif Khan
Faculty Publications

Mobility Enhancement in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors, M. E. Levinshtein, P. A. Ivanov, M. Asif Khan, Grigory Simin, J. Zhang, X. Hu, J. Yang
Faculty Publications

On the Lower Frequency Noise Mechanisms in GaN/AlGaN HFETs, S. L. Rumyantsev, Y. Deng, S. Shur, M. E. Levinshtein, M. A. Khan, Grigory Simin, J. Yang, X. Hu, R. Gaska
Faculty Publications

AlGaN/GaN Heterostructure Field-Effect Transistors on Single-Crystal Bulk AlN, X. Hu, J. Deng, N. Pala, R. Gaska, M. S. Shur, C. Q. Chen, J. Yang, Grigory Simin, M. A. Khan, J. C. Rojo, L. J. Schowalter
Faculty Publications

SiO₂/AlGaN/InGaN/GaN MOSDHFETs, Grigory Simin, A. Koudymov, H. Fatima, Jianping Zhang, J. Yang, M. Asif Khan, X. Hu, A. Tarakji, R. Gaska, M. S. Shur
Faculty Publications

DC and Microwave Performance of a GaN/AlGaN MOSHFET under High Temperature Stress, A. Tarakji, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. A. Khan, M. S. Shur, R. Gaska
Faculty Publications

Nonresonant Detection of Terahertz Radiation in Field Effect Transistors, W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, Grigory Simin, X. Hu, M. Asif Khan, C. A. Saylor, L. C. Brunel
Faculty Publications

Transient Response of Highly Doped Thin Channel GaN Metal-Semiconductor and Metal-Oxide-Semiconductor Field Effect Transistors, N. Pala, S. L. Rumyantsev, M. S. Shur, X. Hu, A. Tarakji, R. Gaska, M. Asif Khan, Grigory Simin, J. Yang
Faculty Publications

Maximum Current in Nitride-Based Heterostructure Field-Effect Transistors, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, R. Gaska
Faculty Publications

Low-Frequency Noise in AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, M. E. Levinshtein, P. A. Ivanov, M. Asif Khan, Grigory Simin, J. Yang, X. Hu, A. Tarakji, R. Gaska
Faculty Publications

High-Temperature Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors, Grigory Simin, A. Tarakji, X. Hu, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications

Drift Mobility of Electrons in AlGaN/GaN MOSHFET, P. A. Ivanov, M. E. Levinshtein, Grigory Simin, X. Hu, J. Yang, M. Asif Khan, S. L. Rumyantsev, M. S. Shur, R. Gaska
Faculty Publications

Induced Strain Mechanism of Current Collapse in AlGaN/GaN Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications

Si₃N₄/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, R. Gaska
Faculty Publications

Low Frequency Noise in GaN Metal Semiconductor and Metal Oxide Semiconductor Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang
Faculty Publications

Thin n-GaN Films with Low Level of 1/f Noise, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. A. Khan, Grigory Simin, X. Hu, J. Yang
Faculty Publications

Mechanism of Radio-Frequency Current Collapse in GaN-AlGaN Field-Effect Transistors, A. Tarakji, Grigory Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications

Large Periphery High-Power AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC with Oxide-Bridging, Grigory Simin, X. Hu, N. Ilinskaya, J. Zhang, A. Tarakji, A. Kumar, J. Yang, M. Asif Khan, R. Gaska, M. S. Shur
Faculty Publications

Highly Doped Thin-Channel GaN-Metal-Semiconductor Field-Effect Transistors, R. Gaska, M. S. Shur, X. Hu, J. W. Yang, A. Tarakji, Grigory Simin, A. Khan, J. Deng, T. Werner, S. Rumyantsev, N. Pala
Faculty Publications

Effect of Gate Leakage Current on Noise Properties of AlGaN/GaN Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang
Faculty Publications

7.5 kW/mm² Current Swith using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates, Grigory Simin, X. Hu, N. Ilinskaya, A. Kumar, A. Koudymov, J. Zhang, M. A. Khan, R. Gaska, M. S. Shur
Faculty Publications

High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates, E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, Grigory Simin, X. Hu, M. Asif Khan, M. S. Shur, R. Gaska, D. Maude
Faculty Publications

AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors on SiC Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, M. S. Shur
Faculty Publications

GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates, M. Asif Khan, J. W. Yang, W. Knap, E. Frayssinet, X. Hu, Grigory Simin, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, R. Gaska, M. S. Shur, B. Beaumont, M. Teisseire, G. Neu
Faculty Publications

Transient Processes in AlGaN/GaN Heterostructure Field Effect Transistors, S. L. Rumyantsev, M. S. Shur, R. Gaska, X. Hu, A. Khan, Grigory Simin, J. Yang, N. Zhang, S. DenBaars, U.K. Mishra
Faculty Publications

Enhancement Mode AlGaN/GaN HFET with Selectively Grown PN Junction Gate, X. Hu, Grigory Simin, J. Yang, M. A. Khan, R. Gaska, M. S. Shur
Faculty Publications

AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor, M. A. Khan, X. Hu, Grigory Simin, A, Lunev, J. Yang, R. Gaska, M. S. Shur
Faculty Publications

Low-Frequency Noise in AlGaN/GaN MOS-HFETs, N. Pala, R. Gaska, S. Rumyantsev, M. S. Shur, M. Asif Khan, X. Hu, Grigory Simin, J. Yang
Faculty Publications