Multigate GaN RF Switches With Capacitively Coupled Contacts, Grigory Simin, B. Khan, Jingbo Wang, A. Koudymov, M. Gaevski, R. Jain, J. Yang, X. Hu, R. Gaska, M. Shur
Faculty Publications

HfO₂-III-Nitride RF Switch with Capacitively Coupled Contacts, A. Koudymov, N. Pala, V. Tokranov, S. Oktyabrsky, M. Gaevski, R. Jain, J. Yang, X. Hu, M. Shur, R. Gaska, Grigory Simin
Faculty Publications

RF Transmission Line Method for Wide-Bandgap Heterostructures, A. Koudymov, N. Pala, V. Tokranov, S. Oktyabrsky, M. Gaevski, Rishabh Jain, J. Yang, X. Hu, M. Shur, R. Gaska, Grigory Simin
Faculty Publications

5-Terminal THzGaN Based Transistor with Field- And Space- Charge Control Electrodes, Grigory Simin, M. S. Shur, R. Gaska
Faculty Publications

An Efficient High-Frequency Drive Circuit for GaN Power HFETs, Bo Wang, N. Tipirneni, M. Riva, A. Monti, Grigory Simin, Enrico Santi
Faculty Publications

Maximum Powers of Low-Loss Series-Shunt FET RF Switches, Z. Yang, X. Hu, J. Yang, Grigory Simin, M. Shur, R. Gaska
Faculty Publications

Cryogenic RF Switch using III-Nitride MOSHFETs, Grigory Simin, A. Koudymov, Z. Yang, X. Hu, J. Yang, M. Shur, R. Gaska
Faculty Publications

Drain-to-Gate Field Engineering for Improved Frequency Response of GaN-Based HEMTs, N. Pala, X. Hu, J. Deng, J. Yang, R. Gaska, Z. Yang, A. Koudymov, M. S. Shur, Grigory Simin
Faculty Publications

Analytical HFET I-V Model in Presence of Current Collapse, A. Koudymov, M. S. Shur, Grigory Simin, Kanin Chu, P.C. Chao, Taehun Lee, J. Jimenez, A. Balistreri
Faculty Publications

Current Crowding in High Performance Low-Loss HFET RF Switches, Z. Yang, J. Wang, X. Hu, J. Yang, Grigory Simin, M. Shur, R. Gaska
Faculty Publications

Silicon Dioxide-Encapsulated High-Voltage AlGaN/GaN HFETs for Power-Switching Applications, N. Tipirneni, V. Adivarahan, Grigory Simin, Asif Khan
Faculty Publications

Current Collapse and Reliability of III-N Heterostructure Field Effect Transistors, A. Koudymov, M. S. Shur, Grigory Simin, R. Gaska
Faculty Publications

Compact Model of Current Collapse in Heterostructure Field-Effect Transistors, A. Koudymov, M. S. Shur, Grigory Simin
Faculty Publications

Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET, V. Adivarahan, M. Gaevski, A. Koudymov, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

Power Stability of AlGaN/GaN HFTs at 20 W/mm in the Pinched-Off Operation Mode, A. Koudymov, C. X. Wang, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

RF-Enhanced Contacts to Wide-Bandgap Devices, Grigory Simin, Z.-J. Yang
Faculty Publications

The 1.6-kV AlGaN/GaN HFETs, N. Tipirneni, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

The 1.6-Kv AlGaN/GaN HFETs, N. Tipirneni, Alexei Koudymov, V. Adivarahan, Jinwei Yang, Grigory Simin, Asif Khan
Faculty Publications

III-Nitride Transistors with Capacitively Coupled Contacts, Grigory Simin, Z.-J. Yang, A. Koudymov, V. Adivarahan, M. Asif Khan
Faculty Publications

High-Power Switching Using III-Nitride Metal-Oxide-Semiconductor Heterostrucstures, Grigory Simin, M. A. Khan, M. S. Shur, R. Gaska
Faculty Publications

Low Threshold-14 W/mm ZrO₂/AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors, Shiva Rai, Vinod Adivarahan, Naveen Tipirneni, Alexei Koudymov, Jinwei Yang, Grigory Simin, M. Asif Khan
Faculty Publications

AlGaN/GaN/AlGaN Double Heterostructure for High-Power III-N Field-Effect Transistors, C. Q. Chen, J. P. Zhang, V. Adivarahan, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan
Faculty Publications

Digital Oxide Deposition of SiO₂ Layers for III-Nitride Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors, V. Adivarahan, S. Rai, N. Tipirneni, A. Koudymov, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

Wide Bandgap Devices with Non-Ohmic Contacts, Grigory Simin
Faculty Publications

Field-Plate Engineering for HFETs, S. Karmalkar, M. S. Shur, Grigory Simin, M. Asif Khan
Faculty Publications

High-Power Operation of III-N MOSHFET RF Switches, Z. Yang, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

Mechanism of Current Collapse Removal in Field-Plated Nitride HFETs, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

Mechanism of Current Collapse Removal in Field-Plated Nitride HFETs, Alexei Koudymov, V. Adivarahan, Jinwei Yang, Grigory Simin, Asif Khan
Faculty Publications

Nanoscale Capacitance-Voltage Characterization of Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures, G. Koley, L. Lakshmanan, N. Tipirneni, M. Gaevski, A. Koudymov, Grigory Simin, Ho-Young Cha, M. G. Spencer, M. A. Khan
Faculty Publications

Stable CW Operation of Field-Plated GaN-AlGaN MOSHFETs at 19W/mm, V. Adivarahan, J. Yang, A. Koudymov, Grigory Simin, M. A. Khan
Faculty Publications

Real-Space Electron Transfer in III-Nitride Metal-Oxide-Semiconductor-Heterojunction Structures, S. Saygi, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan, J. Deng, R. Gaska, M. S. Shur
Faculty Publications

Stable 20 W/mm AlGaN-GaN MOSHFET, Grigory Simin, V. Adivarahan, J. Yang, A. Koudymov, S. Rai, M. Asif Khan
Faculty Publications

Performance Stability of High-power III-Nitride Metal-Oxide Semiconductor-Heterostructure Field-Effect Transistors, S. Saygi, H. Fatima, X. He, S. Rai, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

High-Power RF Switching using III-Nitride Metal-Oxide-Semiconductor Heterojunction Capacitors, Grigory Simin, A. Koudymov, Z.-J. Yang, V. Adivarahan, J. Yang, M. Asif Khan
Faculty Publications

Monolithically Integrated High-Power Broad-Band RF Switch Based on III-N Insulated Gate Transistors, A. Koudymov, S. Rai, V. Adivarahan, M. Gaevski, J. Yang, Grigory Simin, M. A. Khan
Faculty Publications

Simulation of Gate Lag and Current Collapse in Gallium Nitride Field-Effect Transistors, N. Braga, R. Mickevicius, R. Gaska, M. S. Shur, M. Asif Khan, Grigory Simin
Faculty Publications

Simulation of Hot Electron and Quantum Effects in AlGaN/GaN Heterostructure Field Effect Transistors, N. Braga, R. Mickevicius, R. Gaska, H. Xu, M. S. Shur, M. Asif Khan, Grigory Simin, J. Yang
Faculty Publications

Generation-Recombination Noise in GaN-Based Devices, S. L. Rumyantsev, N. Pala, M. S. Shur, M. E. Levinshtein, R. Gaska, M. Asif Khan, Grigory Simin
Faculty Publications

Strain-Engineered Novel III-N Electronic Devices with High Quality Dielectric/Semiconductor Interfaces, M. Asif Khan, M. S. Shur, Grigory Simin
Faculty Publications

Dynamic Current-Voltage Characteristics of III-N HFETs, A. Koudymov, Grigory Simin, M. Asif Khan, A. Tarakji, M. S. Shur
Faculty Publications

Double-Scaled Potential Profile in a Group-III Nitride Alloy Revealed by Monte Carlo Simulation of Exciton Hopping, K. Kazlauskas, G. Tamulaitis, A. Zukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska
Faculty Publications

Submicron Gate Si₃N₄/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, V. Adivarahan, M. Gaevski, W. H. Sun, H. Fatima, A. Koudymov, S. Saygi, Grigory Simin, J. Yang, M. A. Khan, A. Tarakji, M. S. Shur, R. Gaska
Faculty Publications

Large-Signal Linearity in III-N MOSDHFETs, A. Tarakji, H. Fatima, X. Hu, J.-P. Zhang, Grigory Simin, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications

Thermal Management of AlGaN-GaN HFETs on Sapphire Using Flip-Chip Bonding with Epoxy Underfill, Jie Sun, H. Fatima, Alexei Koudymov, A. Chitnis, X. Hu, H.-M Wang, J. Zhang, Grigory Simin, J. Yang, Asif Khan
Faculty Publications

Mobility Enhancement in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors, M. E. Levinshtein, P. A. Ivanov, M. Asif Khan, Grigory Simin, J. Zhang, X. Hu, J. Yang
Faculty Publications

On the Lower Frequency Noise Mechanisms in GaN/AlGaN HFETs, S. L. Rumyantsev, Y. Deng, S. Shur, M. E. Levinshtein, M. A. Khan, Grigory Simin, J. Yang, X. Hu, R. Gaska
Faculty Publications

An Assessment of Wide Bandgap Semiconductors for Power Devices, J. L. Hudgins, Grigory Simin, Enrico Santi, M. Asif Khan
Faculty Publications

Millimeter-Wave High-Power 0.25-µm Gate-Length AlGaN/GaN HEMTs on SiC Substrates, R. S. Schwindt, V. Kumar, A. Kuliev, Grigory Simin, J. W. Yang, M. A. Khan, M. E. Muir, I. Adesida
Faculty Publications

Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications, M. Asif Khan, Grigory Simin, J. Yang, Jianping Zhang, A. Koudymov, M. S. Shur, R. Gaska, Xuhong Hu, A. Tarakji
Faculty Publications

Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications, M. Asif Khan, Grigory Simin, J. Yang, Jianping Zhang, A. Koudymov, M. S. Shur, R. Gaska, Xuhong Hu, A. Tarakji
Faculty Publications

Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications, M. Asif Khan, Grigory Simin, J. Yang, Jinaping Zhang, A. Koudymov, M. S. Shur, R. Gaska, Xuhong Hu, A. Tarakji
Faculty Publications

AlGaN/GaN Heterostructure Field-Effect Transistors on Single-Crystal Bulk AlN, X. Hu, J. Deng, N. Pala, R. Gaska, M. S. Shur, C. Q. Chen, J. Yang, Grigory Simin, M. A. Khan, J. C. Rojo, L. J. Schowalter
Faculty Publications

Time-Resolved Electroluminescence of AlGaN-Based Light-Emitting Diodes with Emission at 285 nm, M. Shatalov, A. Chitnis, V. Mandavilli, R. Pachipulusu, J. P. Zhang, V. Adivarahan, S. Wu, Grigory Simin, M. Asif Khan, G. Tamulaitis, A. Sereika, I. Yilmaz, M. S. Shur, R. Gaska
Faculty Publications

Milliwatt Power Deep Ultraviolet Light-Emitting Diodes Over Sapphire with Emission at 278 nm, J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, Grigory Simin, J. W. Yang, M. Asif Khan
Faculty Publications

Polarization Effects in Photoluminescence of C- and M-Plane GaN/AlGaN Multiple Quantum Wells, E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, Grigory Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, B. Chai
Faculty Publications

Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm, Maxim Shatalov, Ashay Chitnis, Alexey Koudymov, Jianping Zhang, Vinod Adivarahan, Grigory Simin, M. Asif Khan
Faculty Publications

Low-Temperature Operation of AlFaN Single-Quantum-Well Light-Emitting Diodes with Deep Ultraviolet Emission at 285 nm, A. Chitnis, R. Pachipulusu, V. Mandavilli, M. Shatalov, E. Kuokstis, J. P. Zhang, V. Adivarahan, S. Wu, Grigory Simin, M. Asif Khan
Faculty Publications

GaN Homoepitaxy on Freestanding (11̄00) Oriented GaN Substrates, C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, Grigory Simin, M. A. Khan, Herbert-Paul Maruska, David W. Hill, Mitch M. C. Chou, Bruce Chai
Faculty Publications

Near-Band-Edge Photoluminescence of Wurtzite-Type AlN, E. Kuokstis, J. Zhang, Q. Fareed, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur, C. Rojo, L. Schowalter
Faculty Publications

Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates, Maxim Shatalov, Grigory Simin, Vinod Adivarahan, Ashay Chitnis, Shuai Wu, Radhika Pachipulusu, Vasavi Mandavilli, Kirill Simin, Jian Ping Zhang, Jin Wei Yang, Muhammad Asif Khan
Faculty Publications

GaN/AlGaN P-Channel Inverted Heterostructure JFET, Maxim Shatalov, Grigory Simin, Jianping Zhang, Vinod Adivarahan, A. Koudymov, R. Pachipulusu, M. Asif Khan
Faculty Publications

SiO₂/AlGaN/InGaN/GaN MOSDHFETs, Grigory Simin, A. Koudymov, H. Fatima, Jianping Zhang, J. Yang, M. Asif Khan, X. Hu, A. Tarakji, R. Gaska, M. S. Shur
Faculty Publications

DC and Microwave Performance of a GaN/AlGaN MOSHFET under High Temperature Stress, A. Tarakji, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. A. Khan, M. S. Shur, R. Gaska
Faculty Publications

Low-Loss High Power RF Switching using Multifinger AlGaN/GaN MOSHFETs, A. Koudymov, Xuhong Hu, K. Simin, Grigory Simin, M. Ali, J. Yang, M. Asif Khan
Faculty Publications

AlGaN/GaN HEMTs on SiC with f_T of over 120 GHz, V. Kumar, W. Lu, R. Schwindt, A. Kuliev, Grigory Simin, J. Yang, M. Asif Khan, I. Adesida
Faculty Publications

Low-Loss High Power RF Switching Using Multifinger AlGaN/GaN MOSHFETs, Alexei Koudymov, Xuhong Hu, Kirill Simin, Grigory Simin, Mohammod Ali, Jinwei Yang, M. Asif Khan
Faculty Publications

Low Frequency Noise in Gallium Nitride Field Effect Transistors, S. L. Rumyantsev, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, J. W. Yang
Faculty Publications

Nonresonant Detection of Terahertz Radiation in Field Effect Transistors, W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, Grigory Simin, X. Hu, M. Asif Khan, C. A. Saylor, L. C. Brunel
Faculty Publications

Transient Response of Highly Doped Thin Channel GaN Metal-Semiconductor and Metal-Oxide-Semiconductor Field Effect Transistors, N. Pala, S. L. Rumyantsev, M. S. Shur, X. Hu, A. Tarakji, R. Gaska, M. Asif Khan, Grigory Simin, J. Yang
Faculty Publications

Crack-Free Thick AlGaN Grown on Sapphire using AlN/AlGaN Superlattices for Strain Management, J. P. Zhang, H. M. Wang, M. E. Gaevski, C. Q. Chen, Q. Fareed, J. W. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

Luminescence Mechanisms in Quaternary Al_xIn_yGa_1-x-yN Materials, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan
Faculty Publications

Time-Resolved Photoluminescence of Quaternary AlInGaN-Based Multiple Quantum Wells, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan, G. G. Sim, P. W. Yu
Faculty Publications

Pulsed Metalorganic Chemical Vapor Deposition of Quaternary AlInGaN Layers and Multiple Quantum Wells for Ultraviolet Light Emission, Changqing Chen, Jinwei Yang, Mee-Yi Ryu, Jianping Zhang, Edmundas Kuokstis, Grigory Simin, M. Asif Khan
Faculty Publications

324 nm Light Emitting Diodes with Milliwatt Powers, Ashay Chitnis, Jian Ping Zhang, Vinod Adivarahan, Wu Shuai, Jie Sun, Maxim Shatalov, Jin Wei Yang, Grigory Simin, Muhammad Asif Khan
Faculty Publications

Maximum Current in Nitride-Based Heterostructure Field-Effect Transistors, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, R. Gaska
Faculty Publications

Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate, Ashay Chitnis, Vinod Adivarahan, Maxim Shatalov, Jianping Zhang, Michael Gaevski, Wu Shuai, Radhika Pachipulusu, Jason Sun, Kirll Simin, Grigory Simin, Jinwei Yang, Muhammad Asif Khan
Faculty Publications

Deep Ultraviolet Light-Emitting Diodes using Quaternary AllnGaN Multiple Quantum Wells, M. Shatalov, J. Zhang, A. S. Chitnis, V. Adivarahan, J. Yang, Grigory Simin, M. A. Khan
Faculty Publications

Two Mechanisms of Blueshift of Edge Emission in InGaN-Based Epilayers and Multiple Quantum Wells, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur
Faculty Publications

Low-Frequency Noise in AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, M. E. Levinshtein, P. A. Ivanov, M. Asif Khan, Grigory Simin, J. Yang, X. Hu, A. Tarakji, R. Gaska
Faculty Publications

Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells, Muhammad Asif Khan, Vinod Adivarahan, Jian Ping Zhang, Changqing Chen, Edmundas Kuokstis, Ashay Chitnis, Maxim Shatalov, Jin Wei Yang, Grigory Simin
Faculty Publications

Ultraviolet Light-Emitting Diodes at 340 nm using Quaternary AlInGaN Multiple Quantum Wells, V. Adivarahan, A. Chitnis, J. P. Zhang, M. Shatalov, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur
Faculty Publications

Localization of Carriers and Polarization Effects in Quaternary AlInGaN Multiple Quantum Wells, E. Kuokstis, J. Zhang, M.-Y. Ryu, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur
Faculty Publications

Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters, J.P. Zhang, E. Kuokstis, Q. Fareed, H.M. Wang, J.W. Yang, Grigory Simin, M. Asif Khan, G. Tamulaitis, G. Kurilcik, S. Jursenas, A. Zukauskas, R. Gaska, M. Shur
Faculty Publications

High-Temperature Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors, Grigory Simin, A. Tarakji, X. Hu, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications

Polarization Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum Wells, E. Kuokstis, Jianping Zhang, J.W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur
Faculty Publications

Stripe Geometry Light Emitting Diodes over Pulsed Lateral Epitaxial Overgrown GaN for Solid State White Lightning, M. Shatalov, A. Chitnis, D. Basak, J.W. Yang, Q. Fareed, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur
Faculty Publications

AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor, Grigory Simin, Xuhong Hu, Ahmad Tarakji, Jianping Zhang, Alexey Koudymov, Salih Saygi, Jinwei Yang, M. Asif Khan, Michael S. Shur, Remis Gaska
Faculty Publications

Drift Mobility of Electrons in AlGaN/GaN MOSHFET, P. A. Ivanov, M. E. Levinshtein, Grigory Simin, X. Hu, J. Yang, M. Asif Khan, S. L. Rumyantsev, M. S. Shur, R. Gaska
Faculty Publications

Induced Strain Mechanism of Current Collapse in AlGaN/GaN Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications

Si₃N₄/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, R. Gaska
Faculty Publications

Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes, Jian Ping Zhang, Vinod Adivarahan, Hong Mei Wang, Qhalid Fareed, Edmundas Kuokstis, Ashay Chitnis, Maxim Shatalov, Jin Wei Yang, Grigory Simin, Muhammad Asif Khan, Michael Shur, Remis Gaska
Faculty Publications

Indium-Silicon Co-Doping of High-Aluminum-Content AlGaN for Solar Blind Photodetectors, V. Adivarahan, Grigory Simin, G. Tamulaitis, R. Srinivasan, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications

Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers, J. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur
Faculty Publications

Low Frequency Noise in GaN Metal Semiconductor and Metal Oxide Semiconductor Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang
Faculty Publications

Thin n-GaN Films with Low Level of 1/f Noise, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. A. Khan, Grigory Simin, X. Hu, J. Yang
Faculty Publications

Mechanism of Radio-Frequency Current Collapse in GaN-AlGaN Field-Effect Transistors, A. Tarakji, Grigory Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications

Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact to p GaN for High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska
Faculty Publications

Large Periphery High-Power AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC with Oxide-Bridging, Grigory Simin, X. Hu, N. Ilinskaya, J. Zhang, A. Tarakji, A. Kumar, J. Yang, M. Asif Khan, R. Gaska, M. S. Shur
Faculty Publications

Highly Doped Thin-Channel GaN-Metal-Semiconductor Field-Effect Transistors, R. Gaska, M. S. Shur, X. Hu, J. W. Yang, A. Tarakji, Grigory Simin, A. Khan, J. Deng, T. Werner, S. Rumyantsev, N. Pala
Faculty Publications

Band-Edge Luminesce in Quaternary AlInGaN Light-Emitting Diodes, M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J. W. Yang, Q. Fareed, Grigory Simin, A. Zakheim, M. Asif Khan, R. Gaska, M. S. Shur
Faculty Publications

Strain Energy Band Engineering Approach to AlN/GaN/InN Heterojunction Devices, M. S. Shur, R. Gaska, J. W. Yang, Grigory Simin, M. A. Khan
Faculty Publications

Effect of Gate Leakage Current on Noise Properties of AlGaN/GaN Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang
Faculty Publications

High-Quality p-n Junctions with Quaternary AlInGaN/InGaN Quantum Wells, A. Chitnis, A. Kumar, M. Shatalov, V. Adivarahan, A. Lunev, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur
Faculty Publications

7.5 kW/mm² Current Swith using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates, Grigory Simin, X. Hu, N. Ilinskaya, A. Kumar, A. Koudymov, J. Zhang, M. A. Khan, R. Gaska, M. S. Shur
Faculty Publications

Optical Bandgap Formation in AlInGaN Alloys, G. Tamulaitis, K. Kazlauskas, S. Juršėnas, A. Žukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska
Faculty Publications

High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates, E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, Grigory Simin, X. Hu, M. Asif Khan, M. S. Shur, R. Gaska, D. Maude
Faculty Publications

Enhanced Luminescence in InGaN Multiple Quantum Wells with Quaternary AlInGaN Barriers, Jianping Zhang, J. Yang, Grigory Simin, M. Shatalov, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications

SiO₂-Passivated Lateral-Geometry GaN Transparent Schottky-Barrier Detectors, V. Adivarahan, Grigory Simin, J. W. Yang, A. Lunev, M. Asif Khan, M. Pala, M. Shur, R. Gaska
Faculty Publications

AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors on SiC Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, M. S. Shur
Faculty Publications

GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates, M. Asif Khan, J. W. Yang, W. Knap, E. Frayssinet, X. Hu, Grigory Simin, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, R. Gaska, M. S. Shur, B. Beaumont, M. Teisseire, G. Neu
Faculty Publications

Accumulation Hole Layer in p-GaN/AlGaN Heterostructures, M. S. Shur, A. D. Bykhovski, R. Gaska, J. W. Yang, Grigory Simin, M. A. Khan
Faculty Publications

Transient Processes in AlGaN/GaN Heterostructure Field Effect Transistors, S. L. Rumyantsev, M. S. Shur, R. Gaska, X. Hu, A. Khan, Grigory Simin, J. Yang, N. Zhang, S. DenBaars, U.K. Mishra
Faculty Publications

Enhancement Mode AlGaN/GaN HFET with Selectively Grown PN Junction Gate, X. Hu, Grigory Simin, J. Yang, M. A. Khan, R. Gaska, M. S. Shur
Faculty Publications

AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor, M. A. Khan, X. Hu, Grigory Simin, A, Lunev, J. Yang, R. Gaska, M. S. Shur
Faculty Publications

Low-Frequency Noise in AlGaN/GaN MOS-HFETs, N. Pala, R. Gaska, S. Rumyantsev, M. S. Shur, M. Asif Khan, X. Hu, Grigory Simin, J. Yang
Faculty Publications

Lattice and Energy Band Engineering in AlInGaN/Ga Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, Hans-Conrad zur Loye, G. Tamulaitis, A. Zukauskas, David J. Smith, D. Chandrasekhar, R. Bicknell-Tassius
Faculty Publications

Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates, J. W. Yang, A. Lunev, Grigory Simin, A. Chitnis, M. Shatalov, M. Asif Khan, Joseph E. Van Nostrand, R. Gaska
Faculty Publications

Low 1/f Noise in AlGaN/GaN HFETs on SiC Substrates, S. Rumyantsev, M. E. Levinshtein, R. Gaska, M. S. Shur, A. Khan, J. W. Yang, Grigory Simin, A. Ping, T. Adesida
Faculty Publications

Energy Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN Heterostructure, M. Asif Khan, J. W. Yang, Grigory Simin, H. zur Loye, R. Bicknell-Tassius, R. Gaska, M. S. Shur, G. Tamulaitis, A. Zukauskas
Faculty Publications

Piezoelectric Doping in AlInGaN/GaN Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, A. D. Bykovski
Faculty Publications

Low-Frequency Noise in n-GaN with High Electron Mobility, M. E. Levinshtein, S. L. Rumyantsev, D. C. Look, R. J. Molnar, M. Asif Khan, Grigory Simin, V. Adivarahan, M. S. Shur
Faculty Publications

Deriving of Single Intensive Picosecond Optical Pulses from a High-Power Gain-Switched Laser Diode by Spectral Filtering, S. N. Vainshtein, Grigory Simin, J. T. Kostamovaara
Faculty Publications

Low-Frequency Noise in 4H-Silicon Carbide Junction Field Effect Transistors, J. W. Palmour, M. E. Levinshtein, S. L. Rumyantsev, Grigory Simin
Faculty Publications

Simple Method to Determine the Main Gunn Domain Parameters, M. E. Levinshtein, Grigory Simin
Faculty Publications