Biochemical Engineering, Chemical Physics, Biophysics
n- and p-type Ge nanowires were synthesized by a multistep process in which axial elongation, via vapor–liquid–solid (VLS) growth, and doping were accomplished in separate chemical vapor deposition steps. Intrinsic, single-crystal, Ge nanowires prepared by Au nanocluster-mediated VLS growth were surface-doped in situ using diborane or phosphine, and then radial growth of an epitaxial Ge shell was used to cap the dopant layer. Field-effect transistors prepared from these Ge nanowires exhibited on currents and transconductances up to 850 µA/µm and 4.9 µA/V, respectively, with device yields of >85%.
Published in Applied Physics Letters, Volume 84, Issue 21, 2004, pages 4176-4178.
Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Greytak, A. B., Lauhon, L. J., Gudiksen, M. S., & Lieber, C. M. (24 May 2004). Growth and transport properties of complementary germanium nanowire field effect transistors. Applied Physics Letters, 84(21), 4176-4178.