Submissions from 2001
Induced Strain Mechanism of Current Collapse in AlGaN/GaN Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, and R. Gaska
High-Temperature Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors, Grigory Simin, A. Tarakji, X. Hu, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, and R. Gaska
Mechanism of Radio-Frequency Current Collapse in GaN-AlGaN Field-Effect Transistors, A. Tarakji, Grigory Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, and R. Gaska
Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes, Jian Ping Zhang, Vinod Adivarahan, Hong Mei Wang, Qhalid Fareed, Edmundas Kuokstis, Ashay Chitnis, Maxim Shatalov, Jin Wei Yang, Grigory Simin, Muhammad Asif Khan, Michael Shur, and Remis Gaska
Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers, J. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. Yang, Grigory Simin, M. Asif Khan, R. Gaska, and M. Shur
Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters, J.P. Zhang, E. Kuokstis, Q. Fareed, H.M. Wang, J.W. Yang, Grigory Simin, M. Asif Khan, G. Tamulaitis, G. Kurilcik, S. Jursenas, A. Zukauskas, R. Gaska, and M. Shur
Submissions from 2000
SiO2-Passivated Lateral-Geometry GaN Transparent Schottky-Barrier Detectors, V. Adivarahan, Grigory Simin, J. W. Yang, A. Lunev, M. Asif Khan, M. Pala, M. Shur, and R. Gaska
High-Quality p-n Junctions with Quaternary AlInGaN/InGaN Quantum Wells, A. Chitnis, A. Kumar, M. Shatalov, V. Adivarahan, A. Lunev, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, and M. Shur
High Performance Micropane Electron Beam Window, Roger A. Dougal and Shengyi Liu
High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates, E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, Grigory Simin, X. Hu, M. Asif Khan, M. S. Shur, R. Gaska, and D. Maude
Enhancement Mode AlGaN/GaN HFET with Selectively Grown PN Junction Gate, X. Hu, Grigory Simin, J. Yang, M. A. Khan, R. Gaska, and M. S. Shur
AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor, M. A. Khan; X. Hu; Grigory Simin; A, Lunev; J. Yang; R. Gaska; and M. S. Shur
AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors on SiC Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, and M. S. Shur
GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates, M. Asif Khan, J. W. Yang, W. Knap, E. Frayssinet, X. Hu, Grigory Simin, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, R. Gaska, M. S. Shur, B. Beaumont, M. Teisseire, and G. Neu
Lattice and Energy Band Engineering in AlInGaN/Ga Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, Hans-Conrad zur Loye, G. Tamulaitis, A. Zukauskas, David J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius
3D Outside Cell Interference Factor for an Air-Ground CDMA ‘Cellular’ System, David W. Matolak
Low-Frequency Noise in AlGaN/GaN MOS-HFETs, N. Pala, R. Gaska, S. Rumyantsev, M. S. Shur, M. Asif Khan, X. Hu, Grigory Simin, and J. Yang
Effect of Gate Leakage Current on Noise Properties of AlGaN/GaN Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, and J. Yang
Transient Processes in AlGaN/GaN Heterostructure Field Effect Transistors, S. L. Rumyantsev, M. S. Shur, R. Gaska, X. Hu, A. Khan, Grigory Simin, J. Yang, N. Zhang, S. DenBaars, and U.K. Mishra
Ultrafast Electronic Relaxation Dynamics in Layered Iodide Semiconductors: A Comparative Study of Colloidal BiI3 and PbI2 Nanoparticles, A. Sengupta, K. C. Mandal, and J. Z. Zhang
Accumulation Hole Layer in p-GaN/AlGaN Heterostructures, M. S. Shur, A. D. Bykhovski, R. Gaska, J. W. Yang, Grigory Simin, and M. A. Khan
7.5 kW/mm2 Current Swith using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates, Grigory Simin, X. Hu, N. Ilinskaya, A. Kumar, A. Koudymov, J. Zhang, M. A. Khan, R. Gaska, and M. S. Shur
Optical Bandgap Formation in AlInGaN Alloys, G. Tamulaitis, K. Kazlauskas, S. Juršėnas, A. Žukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, and R. Gaska
Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates, J. W. Yang, A. Lunev, Grigory Simin, A. Chitnis, M. Shatalov, M. Asif Khan, Joseph E. Van Nostrand, and R. Gaska
Enhanced Luminescence in InGaN Multiple Quantum Wells with Quaternary AlInGaN Barriers, Jianping Zhang, J. Yang, Grigory Simin, M. Shatalov, M. Asif Khan, M. S. Shur, and R. Gaska
Submissions from 1999
Piezoelectric Doping in AlInGaN/GaN Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, and A. D. Bykovski
Energy Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN Heterostructure, M. Asif Khan, J. W. Yang, Grigory Simin, H. zur Loye, R. Bicknell-Tassius, R. Gaska, M. S. Shur, G. Tamulaitis, and A. Zukauskas
Low-Frequency Noise in n-GaN with High Electron Mobility, M. E. Levinshtein, S. L. Rumyantsev, D. C. Look, R. J. Molnar, M. Asif Khan, Grigory Simin, V. Adivarahan, and M. S. Shur
Low 1/f Noise in AlGaN/GaN HFETs on SiC Substrates, S. Rumyantsev, M. E. Levinshtein, R. Gaska, M. S. Shur, A. Khan, J. W. Yang, Grigory Simin, A. Ping, and T. Adesida
Ultrafast Electronic Relaxation Dynamics in PbI2 Semiconductor Colloidal Nanoparticles: A Femtosecond Transient Absorption Study, A. Sengupta, B. Jiang, K. C. Mandal, and J. Z. Zhang
Submissions from 1998
Growth, Characterization and Spectroscopic Investigations of InI Crystals for Optical and Radiation Detector Applications, K. C. Mandal, M. Klugerman, L. J. Cirignano, L. P. Moy, K. S. Shah, M. R. Squillante, and R. N. Bhattacharyya
Characterization of X-Ray Imaging Properties of PbI2 Films, K. S. Shah, P. Bennett, L. Cirignano, Y. Dmitriyev, M. Klugerman, K. C. Mandal, L. P. Moy, and R. A. Street
X-Ray Imaging with Semiconductor Films, K. S. Shah, P. R. Bennett, L. J. Cirignano, Y. N. Dmitriyev, M. B. Klugerman, K. C. Mandal, L. P. Moy, and R. A. Street
Deriving of Single Intensive Picosecond Optical Pulses from a High-Power Gain-Switched Laser Diode by Spectral Filtering, S. N. Vainshtein, Grigory Simin, and J. T. Kostamovaara
Submissions from 1996
Review of Technologies for Current-Limiting Low-Voltage Circuit Breakers, Charles W. Brice, Roger A. Dougal, and J. L. Hudgins
Current-Limiting Thermistors for High-Power Applications, Roger A. Dougal
Detection for a Statistically-Known, Time-Varying Dispersive Channel, David W. Matolak and S. G. Wilson
Variable-Complexity Trellis Decoding of Binary Convolutional Codes, David W. Matolak and S. G. Wilson
Low-Frequency Noise in 4H-Silicon Carbide Junction Field Effect Transistors, J. W. Palmour, M. E. Levinshtein, S. L. Rumyantsev, and Grigory Simin
Submissions from 1995
Streamer Model for Ionization Growth in a Photoconductive Power Switch, Roger A. Dougal
Submissions from 1994
Fabrication of Low-Cost n-Sb2S3/p-Ge Heterojunction Solar Cells, O. Savadogo and K. C. Mandal
Low Cost Schottky Barrier Solar Cells Fabricated on CdSe and Sb2S3 Films Chemically Deposited with Silicotungstic Acid, O. Savadogo and K. C. Mandal
Submissions from 1993
Modulated Infrared Spectroscopy at the Electrochemical Interface, J. N. Chazalviel, V. M. Dubin, K. C. Mandal, and F. Ozanam
Low‐Cost Technique for Preparing n‐Sb2S3/p‐Si Heterojunction Solar Cells, O. Savadogo and K. C. Mandal
Submissions from 1992
Voltage-Drop Calculations and Power-Flow Studies for Rural Electric Distribution Lines, Charles W. Brice
In-Situ FTIR Spectroscopy at the Electrochemical Interface: The Interest of a Modulation Technique, J.-N. Chazalviel, K. C. Mandal, and F. Ozanam
In-situ Infrared Investigations of the Electrochemistry of Heteropolyacids at n-Ge Electrodes, K. C. Mandal, F. Ozanam, and J.-N. Chazalviel
Chemically Deposited n-CdSe Thin Film Photo-Electrochemical Cells: Effects of Zn2+-Modification, K. C. Mandal and O. Savadogo
Characterizations of Antimony Tri‐Sulfide Chemically Deposited with Silicotungstic Acid, O. Savadogo and K. C. Mandal
Improved Schottky Barrier on n-Sb2S3 Films Chemically Deposited with Silicotungstic Acid, O. Savadogo and K. C. Mandal
Photoelectrochemical (PEC) Solar Cell Properties of Chemically Deposited Cadmium Selenide Thin Films with Heteropolyacids, O. Savadogo and K. C. Mandal
Studies on New Chemically Deposited Photoconducting Antimony Trisulphide Thin Films, O. Savadogo and K. C. Mandal
Submissions from 1991
Design of a New Electromechanical Systems Instructional Laboratory, Charles W. Brice
Studies of Sub-Bandgap Response on Surface-Modified n-CdSe Photoelectrodes, K. C. Mandal and K. S. V. Santhanam
A New Chemical Method of Preparing Semiconducting MoX2 (X=S, Se) Thin Films, K. C. Mandal and O. Savadogo
High-Efficiency Chemically Deposited CdSe Photoelectrochemical Solar Cells: Effect of SiW12O404- Incorporation, K. C. Mandal and O. Savadogo
Novel Chemical Preparative Route for Semiconducting MoSe2 Thin Films, K. C. Mandal and O. Savadogo
Submissions from 1990
Simulation of Magnetic Switching Action in High-Power Systems, Roger A. Dougal
Fermi Level Shift with Photovoltages at Zinc Modified CdSe Surfaces, K. C. Mandal
A New Chemical Method for Preparing Semiconductor Grade Antimony Tri-Sulphide Thin Films, K. C. Mandal and A. Mondal
Chemically Deposited Semiconducting Molybdenum Sulfide Thin Films, K. C. Mandal and A. Mondal
In situ Infrared Evidence for the Electrochemical Incorporation of Hydrogen into Si and Ge, K. C. Mandal, F. Ozanam, and J.-N. Chazalviel
A Comparative Study of CdTe Films Prepared by Different Techniques, G. S. Sanyal, A. Mondal, K. C. Mandal, B. Ghosh, H. Saha, and M. K. Mukherjee
Submissions from 1989
XPS Investigation of CdTe Surfaces: Effect of Ru Modification, D. N. Bose, M. S. Hedge, S. Basu, and K. C. Mandal
Submissions from 1988
Characterization of Chemically Modified CdTe Surfaces, D. N. Bose, S. Basu, and K. C. Mandal
CdTe Photoelectrochemical Solar Cells—Chemical Modification of Surfaces, K. C. Mandal, S. Basu, and D. N. Bose
Submissions from 1987
Partial Discharge Characteristics in Barium-Titanate Multilayered Structures - Effect of Material and Structural Parameters, Roger A. Dougal
Surface-to-Surface Transition via Electromagnetic Coupling of Coplanar Waveguides, Robert W. Jackson and David W. Matolak
Correlation of Fermi Level Shift with Photovoltages at Ruthenium-Modified CdTe Surfaces, K. C. Mandal
Effects of Surface Modification on n-Cadmium Telluride Photoelectrochemical Solar Cells, K. C. Mandal, S. Basu, and D. N. Bose
Moment Method Analysis of the Electric Field Under EHV Transmission Lines, T. L. Simpson and Charles W. Brice
Submissions from 1986
Evidence for Amphoteric Behavior of Ru on CdTe Surfaces, D. N. Bose, S. Basu, K. C. Mandal, and D. Mazumdar
Mechanisms of Surface Flashover Along Solid Dielectrics in Compressed Gases - A Review, Tangali S. Sudarshan and Roger A. Dougal
Submissions from 1985
Modeling and System Identification of Residential Air Conditioning Load, Anil Pahwa and Charles W. Brice
Submissions from 1984
Pre-Breakdown and Breakdown Phenomena Along PMMA Surfaces in Vacuum and Nitrogen Gas Stressed By 60 Hz Voltages, Roger A. Dougal
Submissions from 1980
Simple Method to Determine the Main Gunn Domain Parameters, M. E. Levinshtein and Grigory Simin