We report on observing a long-wavelength band in low-temperature photoluminescence(PL)spectrum of quaternary Al0.22In0.02Ga0.76N/Al0.38In0.01Ga0.61N multiple quantum wells(MQWs), which were grown over sapphire substrates by a pulsed atomic-layer epitaxy technique. By comparing the excitation-power density and temperature dependence of the PLspectra of MQWs and bulk quaternary AlInGaN layers, we show this emission band to arise from the carrier and/or exciton localization at the quantum well interface disorders. PL data for other radiative transitions in MQWs indicate that excitation-dependent spectra position is determined by screening of the built-in electric field.
Published in Applied Physics Letters, Volume 79, Issue 26, 2001, pages 4375-4377.
©Applied Physics Letters 2001, American Institute of Physics (AIP).
Kuokstis, E., Zhang, J., Ryu, M.-Y., Yang, J. W., Simin, G., Khan, M. A., Gaska, R., & Shur, M. S. (24 December 2001). Localization of Carriers and Polarization Effects in Quaternary AlInGaN Multiple Quantum Wells. Applied Physics Letters, 79 (26), 4375-4377. http://dx.doi.org/10.1063/1.1429753