We report on a transparent Schottky-barrierultraviolet detector on GaN layers over sapphire substrates. Using SiO2 surface passivation, reverse leakage currents were reduced to a value as low as 1 pA at 5 V reverse bias for 200 μm diameter device. The device exhibits a high internal gain, about 50, at low forward biases. The response time (about 15 ns) is RC limited, even in the internal gain regime. A record low level of the noise spectral density, 5×10−23 A2/Hz, was measured at 10 Hz. We attribute this low noise level to the reduced reverse leakage current.
Published in Applied Physics Letters, Volume 77, Issue 6, 2000, pages 863-865.
©Applied Physics Letters 2000, American Institute of Physics (AIP).
Adivarahan, V., Simin, G., Yang, J. W., Lunev, A., Khan, M. A., Pala, N., Shur, M., & Gaska, R. (7 August 2000). SiO2-Passivated Lateral-Geometry GaN Transparent Schottky-Barrier Detectors. Applied Physics Letters, 77 (6), 863-865. http://dx.doi.org/10.1063/1.1306647