The breakdown voltages in unpassivated nonfield-plated AlGan/GaN HFETs on sapphire substrates were studied. These studies reveal that the breakdown is limited by the surface flashover rather than by the AlGan/GaN channel. after elimination of the surface flashover in air, the breakdown voltage scaled linearly with the gate-drain spacing reaching 1.6 kV at 20 mu m. The corresponding static ON-resistance was as low as 3.4 m Omega(.)cm(2). This translates to a power device figure-of-merit V-BR(2)/R-ON = 7.5 x 10(8) V-2 . n(-1) cm(-2), which, to date, is among the best reported values for an AlGan/GaN HFET.
Published in IEEE Electron Device Letters, Volume 27, Issue 9, 2006, pages 716-718.
© 2006 by IEEE